Inventor · name-matched record
LIN TA-CHUN
11 granted patents·11 pending applications·0 citations·filing 2022–2025
78Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
22 records- 0181US12520520B2Isolation structure for isolating source/drain region structure from adjacent source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 6, 2026·0 cites·20 claims
- 0273US2026013218A1Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0368US12588229B2Gate-top dielectric structure for self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 0463US12557375B2Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 0562US12598764B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 0662US2026032958A1Bottom Isolations and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0762US2026020272A1Structure and formation method of semiconductor device with epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0862US2026047197A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0962US2026059826A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1062US2026068223A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1161US12593489B2Semiconductor structure including gate spacer layer and dielectric layer having portion lower than top surface of gate spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 31, 2026·0 cites·20 claims
- 1261US12538533B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
- 1361US2026075879A1Pyramid geometry metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1461US2026082631A1Bottom Insulation for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1560US12563798B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 1660US12550428B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 1760US2026047156A1Gate-all-around transistors with reduced parasitic capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1860US2026068253A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1959US12575146B2Semiconductor structure, semiconductor assembly and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 10, 2026·0 cites·20 claims
- 2059US2026052761A1Cpode landing structure on insulator substrate and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2158US12520574B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 2256US12581705B2Semiconductor device including multiple stacks of semiconductor nanosheets, multiple strained layers, and dielectric wall located strained layers and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →