Inventor · name-matched record
LIN WUN-JIE
5 granted patents·5 pending applications·0 citations·filing 2021–2025
60Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD10
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
10 records- 0196US2026040634A1Guard ring and circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0291US2026096207A1Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0378US12520579B2Method and system for manufacturing integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 0470US12549001B2ESD protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 10, 2026·0 cites·20 claims
- 0563US12557689B2Package structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 0660US12557396B2Device having nanostructure electrostatic discharge structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 0760US2026066646A1Electrostatic discharge (esd) protection circuit using tie-cell techniqueTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0851US2026082601A1Stacked pin diode and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0950US2026075962A1Dual-diode fail-safe input/output (fsio) scheme as electrostatic discharge (esd) fsio solutionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1049US12588294B2Low-leakage ESD protection circuit and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 24, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →