Inventor · name-matched record
Lin zhi-chang
9 granted patents·10 pending applications·1 citations·filing 2021–2025
76Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
19 records- 0196US2026059852A1Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0291US2026082637A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0389US12543352B2Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 3, 2026·1 cites·20 claims
- 0487US12538511B2Semiconductor device and method fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 27, 2026·0 cites·20 claims
- 0583US2026059794A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0675US12538569B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 27, 2026·0 cites·20 claims
- 0772US12532505B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 0870US2026096079A1Methods of forming weak sram pfets in mcfets and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0966US12538570B2Reduction of gate-drain capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 27, 2026·0 cites·20 claims
- 1064US12520543B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 1163US12588247B2Spacer structures for nano-sheet-based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 24, 2026·0 cites·20 claims
- 1260US12532492B2Structure and formation method of semiconductor device with epitaxial structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 20, 2026·0 cites·20 claims
- 1359US2026089996A1Pseudo cfet structures and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1457US12557358B2Nanosheet semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 1554US2026082694A1Method and structure for hybrid cell configuration in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1647US2026096184A1Cfet structure with separate n-mos and p-mos processes via an eslTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1747US2026082675A1Bottom dielectric isolation layer as an esl and a backside self-alignment featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1846US2026096198A1Protective structures in stacking transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1944US2026096201A1Channel isolation structures in stacking transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →