Inventor · name-matched record
MOCHIZUKI SHOGO
13 granted patents·2 pending applications·0 citations·filing 2020–2024
80Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
15 records- 0168US12557260B2Stacked-FET SRAM cell with bottom pFETIBM·Filed 2022·Granted Feb 17, 2026·0 cites·16 claims
- 0268US12557359B2Self-aligned backside contact with protruding source/drainIBM·Filed 2023·Granted Feb 17, 2026·0 cites·17 claims
- 0367US12598789B2Self-aligned backside contactINT BUSINESS MACHINES CORPORATION·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 0467US12581719B2Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistorsIBM·Filed 2020·Granted Mar 17, 2026·0 cites·20 claims
- 0567US12575157B2Nanosheet with dual isolation regions separated by buried inner spacerIBM·Filed 2022·Granted Mar 10, 2026·0 cites·24 claims
- 0663US12568652B2Forming gate all around device with silicon-germanium channelIBM·Filed 2022·Granted Mar 3, 2026·0 cites·15 claims
- 0763US2026068224A1Gate-all-around device with reduced source/drain extension (sde) resistanceIBM·Filed 2024·Application pending·0 cites
- 0863US2026068225A1Gate-all-around device with common material for channel and source/drain extension (sde)IBM·Filed 2024·Application pending·0 cites
- 0962US12588265B2Semiconductor structure with enhanced placeholder position marginIBM·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 1059US12568661B2Self-aligned backside trench epitaxy for low contact resistivityIBM·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
- 1159US12568683B2Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFETIBM·Filed 2022·Granted Mar 3, 2026·0 cites·17 claims
- 1259US12527032B2Backside contact with shallow placeholder and easy backside semiconductor removalIBM·Filed 2022·Granted Jan 13, 2026·0 cites·17 claims
- 1358US12568645B2Vertical field effect transistor with self-aligned backside trench epitaxyIBM·Filed 2022·Granted Mar 3, 2026·0 cites·16 claims
- 1458US12550385B2Contact resistance of nanosheet transistorIBM·Filed 2022·Granted Feb 10, 2026·0 cites·19 claims
- 1553US12598780B2Gate-all-around transistors with hybrid orientationINT BUSINESS MACHINES CORPORATION·Filed 2022·Granted Apr 7, 2026·0 cites·12 claims
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Identity basis: exact name match across USPTO filings. How scoring works →