Inventor · name-matched record
MORE SHAHAJI B
12 granted patents·3 pending applications·0 citations·filing 2022–2025
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
15 records- 0191US2026090051A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0288US12527041B2Method of forming source/drain epitaxial stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 13, 2026·0 cites·20 claims
- 0388US2026026089A1Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0478US12518971B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 0577US12532520B2Source/drain EPI structure for device boostTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 0670US12550364B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 0770US2026011043A1Epitaxial structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0869US12581689B2Multi-gate semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 17, 2026·0 cites·20 claims
- 0969US12520545B2Semiconductor device with offset source/drain regions and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 1068US12588238B2Semiconductor device and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 24, 2026·0 cites·20 claims
- 1167US12550363B2Epitaxial source/drain configurations for multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1266US12532494B2Epitaxy regions with reduced loss controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 1359US12550360B2Source/drain contact landingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1457US12550413B2Plurality of semiconductor fin structures in p-type metal-oxide-semiconductor (MOS) region and n-type MOS region with a plurality of dielectric features in between and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 1556US12588244B2Semiconductor devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →