Inventor · name-matched record
MURTHY ANAND
7 granted patents·18 pending applications·0 citations·filing 2021–2024
67Inventor score
Files withINTEL CORP25
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
25 records- 0162US2026006800A1Device, method and system to provide heterogeneous memory circuit stackingINTEL CORP·Filed 2024·Application pending·0 cites
- 0262US2026005094A1Device, method and system to conduct heat through an active layer of an integrated circuit dieINTEL CORP·Filed 2024·Application pending·0 cites
- 0362US2026005131A1Device, method and system to provide electrical coupling across active layers of an integrated circuit dieINTEL CORP·Filed 2024·Application pending·0 cites
- 0462US2026006801A1Vertically stacked memory arrays corresponding to respective single dopant typesINTEL CORP·Filed 2024·Application pending·0 cites
- 0560US2026096140A1Self-aligned backside vias using endpointed subfin etchINTEL CORP·Filed 2024·Application pending·0 cites
- 0660US2026096152A1Fabricating high quality, high stress channel regions in gate-all-around field effect transistors (gaa fets)INTEL CORP·Filed 2024·Application pending·0 cites
- 0758US2026006859A1Strain engineering using gate cutsINTEL CORP·Filed 2024·Application pending·0 cites
- 0858US2026096195A1Cell architecture with forksheet and gate-all-around devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 0958US2026005067A1Backside etch processes for ultra uniformity of front-end structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 1058US2026090023A1Defect-free epitaxial source and drain structures for ribbon field effect transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 1158US2026006873A1Fabrication of ribbon cfets with optimized nmos and pmos channel materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 1258US2026090039A1Improved removal of sacrificial material for minimized channel extensionsINTEL CORP·Filed 2024·Application pending·0 cites
- 1358US2026090024A1Complementary gate cut plugs for strain optimizationINTEL CORP·Filed 2024·Application pending·0 cites
- 1457US12564030B2Replacement conductive material for interconnect featuresINTEL CORP·Filed 2021·Granted Feb 24, 2026·0 cites·20 claims
- 1557US2026006912A1Sige nanoribbons for high performance transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 1656US12550732B2Single conductivity type devices for low temperature computationINTEL CORP·Filed 2022·Granted Feb 10, 2026·0 cites·22 claims
- 1756US2026006846A1Sacrificial ribbon for uniform workfunction and capacitance benefitsINTEL CORP·Filed 2024·Application pending·0 cites
- 1856US2026006906A1Silicon source and drain trench fill for wider contactsINTEL CORP·Filed 2024·Application pending·0 cites
- 1956US2026032960A1Backside contact structure with enhanced ohmic contactINTEL CORP·Filed 2024·Application pending·0 cites
- 2056US2026006833A1Transistor metallization endcap scaling for performance optimizationINTEL CORP·Filed 2024·Application pending·0 cites
- 2155US12550733B2Multiple epitaxial layer source and drain transistors for low temperature computationINTEL CORP·Filed 2022·Granted Feb 10, 2026·0 cites·23 claims
- 2255US12550381B2Device, method and system to provide epitaxial structures opposite sides of a separation layer between channel stacksINTEL CORP·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 2353US12557340B2Cladding and condensation for strained semiconductor nanoribbonsINTEL CORP·Filed 2021·Granted Feb 17, 2026·0 cites·20 claims
- 2453US12520509B2Diode structure with backside epitaxial growthINTEL CORP·Filed 2021·Granted Jan 6, 2026·0 cites·20 claims
- 2551US12543351B2Enriched semiconductor nanoribbons for producing intrinsic compressive strainINTEL CORP·Filed 2021·Granted Feb 3, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →