Inventor · name-matched record
PARK JONGHWAN
0 granted patents·3 pending applications·0 citations·filing 2024–2025
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
3 records- 0175US2026038792A1Solvent-free electrodeFORD GLOBAL TECH LLC·Filed 2024·Application pending·0 cites
- 0274US2026031322A1Solvent-free electrodeFORD GLOBAL TECH LLC·Filed 2024·Application pending·0 cites
- 0356US2026090364A1Method of manufacturing sacrificial layer and method of manufacturing semiconductor device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →