Inventor · name-matched record
REBOH SHAY
3 granted patents·19 pending applications·0 citations·filing 2022–2024
40Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
22 records- 0167US12588484B2Backside diffusion breakIBM·Filed 2023·Granted Mar 24, 2026·0 cites·25 claims
- 0267US12557627B2Stacked FET with bottom epi size control and wraparound backside contactIBM·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 0364US2026076167A1Interconnect structure for semiconductor device with airgapIBM·Filed 2024·Application pending·0 cites
- 0462US2026068307A1Stacked transistors with work function materialIBM·Filed 2024·Application pending·0 cites
- 0562US2026096199A1Stacked fet with flexible inter-epi dielectric thicknessIBM·Filed 2024·Application pending·0 cites
- 0662US2026068308A1Angled gate connector for shifted stacked fetIBM·Filed 2024·Application pending·0 cites
- 0762US2026059830A1Fork sheet field effect transistor with increased electrostatic controlIBM·Filed 2024·Application pending·0 cites
- 0861US2026018514A1Gate interconnecting structures for stacked field-effect transistorsIBM·Filed 2024·Application pending·0 cites
- 0961US2026020340A1Stacked fets with interdevice power deliveryIBM·Filed 2024·Application pending·0 cites
- 1061US2026096164A1Stepped epitaxy structure for stacked field effect transistor (sfet) deviceIBM·Filed 2024·Application pending·0 cites
- 1161US2026096147A1Discontinuous high dielectric constant (hk) layerIBM·Filed 2024·Application pending·0 cites
- 1261US2026101581A1Gate connection for stacked transistorsINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 1359US2026006908A1L-shaped stacked field effect transistor isolated with top and bottom gatesIBM·Filed 2024·Application pending·0 cites
- 1459US2026006910A1Semiconductor device with dielectric isolation structureIBM·Filed 2024·Application pending·0 cites
- 1559US2026040675A1Monolithic stacked complementary transistor structures with dual work function metal gatesIBM·Filed 2024·Application pending·0 cites
- 1659US2026040674A1Monolithic stacked complementary transistor structures with dual work function metal gatesIBM·Filed 2024·Application pending·0 cites
- 1758US2026006901A1Shifted stacked fets with backside s/d contactsIBM·Filed 2024·Application pending·0 cites
- 1858US2026040673A1Stacked transistor with 2d material channelsIBM·Filed 2024·Application pending·0 cites
- 1957US2026101552A1Backside replacement metal gate for stacked transistorsINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 2057US2026059855A1Terminal region contact structures for field-effect transistorsIBM·Filed 2024·Application pending·0 cites
- 2156US12575386B2Method for direct hydrophilic bonding of substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Mar 10, 2026·0 cites·22 claims
- 2254US2026090091A1L-shaped stacked semiconductor architectureIBM·Filed 2024·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when REBOH SHAY files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: exact name match across USPTO filings. How scoring works →