Inventor · name-matched record
SEO KANG-ILL
7 granted patents·17 pending applications·0 citations·filing 2022–2025
67Inventor score
Files withSAMSUNG ELECTRONICS CO LTD24
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
24 records- 0181US2026068269A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0280US2026040927A1Integrated circuit devices including backside power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0370US12543347B2Different diffusion break structures for three-dimensional stacked semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 3, 2026·0 cites·20 claims
- 0464US12543380B2Integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Feb 3, 2026·0 cites·20 claims
- 0564US12520580B2Macro device-under-test structure for measuring contact resistance of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·11 claims
- 0661US2026096204A1Semiconductor device including multi-layer work-function metalSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0759US12575147B23D-stacked transistor structure with barrier layer between upper gate structure and lower gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 10, 2026·0 cites·20 claims
- 0857US2026040682A1Cell architecture including signal line tracks on front side and back side of cellSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0955US2026075931A1Stacked semiconductor device manufactured using dummy channel stack and barrier layerSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1054US12564036B2Integrated circuit devices including via structures having a narrow upper portion, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 1154US2026052765A1Integrated circuit devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1253US2026096203A1Stacked semiconductor device including different source/drain contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1353US2026101543A1Semiconductor devices including stressor layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1452US12593674B2Semiconductor transistor device including backside contact structure vertically between backside power rail and source/drain structure and method of forming thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 31, 2026·0 cites·20 claims
- 1552US2026040650A1Semiconductor device including buried backside isolation structure and self-aligned backside contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1652US2026101580A1Integrated circuit devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1751US12588489B2Integrated circuit devices including stacked elements and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 24, 2026·0 cites·14 claims
- 1851US2026068310A1Semiconductor device including different types of field-effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1951US2026096193A1Integrated circuit devices including stacked transistors and methods of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2051US2026052764A1Semiconductor device including contact structure with extra isolation layer thereonSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2150US2026059839A1Semiconductor device manufactured using gate-leaning prevention structureSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2249US2026052768A1Semiconductor device including fill frontside contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2348US2026052767A1Integrated circuit devices including stacked transistors having independently adjustable gates, channels, and inner spacers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2445US2026011636A1Integrated circuit devices including interconnection structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →