Inventor · name-matched record

SUNG HSUEH-CHANG

1 granted patent·1 pending application·0 citations·filing 2023–2024

14Inventor score

Technology areasH10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD2

This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.

Top patents by PatentIndex Score

2 records

0185US12538529B2Epitaxial fin structures of FINFET having an epitaxial buffer region and an epitaxial capping regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
0258US2026082607A1Nanostructure patterning for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites

Join the waitlist — get patent alerts

Get an alert when SUNG HSUEH-CHANG files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: exact name match across USPTO filings. How scoring works →