Inventor · name-matched record
TSUTSUI GEN
3 granted patents·0 citations·filing 2022–2022
40Inventor score
Files withIBM3
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
3 records- 0168US12557260B2Stacked-FET SRAM cell with bottom pFETIBM·Filed 2022·Granted Feb 17, 2026·0 cites·16 claims
- 0263US12568652B2Forming gate all around device with silicon-germanium channelIBM·Filed 2022·Granted Mar 3, 2026·0 cites·15 claims
- 0359US12568683B2Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFETIBM·Filed 2022·Granted Mar 3, 2026·0 cites·17 claims
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Identity basis: exact name match across USPTO filings. How scoring works →