Inventor · name-matched record
WANG JUNLI
11 granted patents·6 pending applications·0 citations·filing 2022–2024
77Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
17 records- 0168US12568669B2Placeholder profile formation for backside contactIBM·Filed 2023·Granted Mar 3, 2026·0 cites·14 claims
- 0267US12557627B2Stacked FET with bottom epi size control and wraparound backside contactIBM·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 0365US12581702B2Common self aligned gate contact for stacked transistor structuresIBM·Filed 2022·Granted Mar 17, 2026·0 cites·20 claims
- 0465US12550448B2Protection diode to prevent charge damage during MOLIBM·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 0562US12593668B2Shallow and deep contacts with stitchingIBM·Filed 2022·Granted Mar 31, 2026·0 cites·20 claims
- 0662US2026096199A1Stacked fet with flexible inter-epi dielectric thicknessIBM·Filed 2024·Application pending·0 cites
- 0762US2026040676A1Multi-threshold voltage stack of a stacked field effect transistorIBM·Filed 2024·Application pending·0 cites
- 0861US12593468B2Self-aligned backside contact with increased contact areaIBM·Filed 2022·Granted Mar 31, 2026·0 cites·20 claims
- 0961US2026018514A1Gate interconnecting structures for stacked field-effect transistorsIBM·Filed 2024·Application pending·0 cites
- 1061US2026096147A1Discontinuous high dielectric constant (hk) layerIBM·Filed 2024·Application pending·0 cites
- 1160US12543554B2Stacked field effect transistor contactsIBM·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 1259US12550712B2Bulk substrate backside power railIBM·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1359US2026006843A1L-shaped stacked field effect transistorIBM·Filed 2024·Application pending·0 cites
- 1458US12557353B2Method and structure for a logic device and another deviceIBM·Filed 2022·Granted Feb 17, 2026·0 cites·11 claims
- 1558US2026101542A1Stress generation in stacked nanosheet architecturesINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 1656US12575113B2High density memory with stacked nanosheet transistorsIBM·Filed 2022·Granted Mar 10, 2026·0 cites·15 claims
- 1749US12563715B2Stacked random-access-memory with complementary adjacent cellsIBM·Filed 2022·Granted Feb 24, 2026·0 cites·11 claims
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Identity basis: exact name match across USPTO filings. How scoring works →