Inventor · name-matched record
XIA ZHILIANG
16 granted patents·13 pending applications·1 citations·filing 2021–2025
85Inventor score
Files withYANGTZE MEMORY TECH CO LTD29
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
29 records- 0196US2026090351A1Methods for forming contact structures and semiconductor devices thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0296US2026096099A1Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0391US12520486B2Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 6, 2026·1 cites·10 claims
- 0489US12550329B2Vertical memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Feb 10, 2026·0 cites·20 claims
- 0588US2026047095A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0688US2026026010A1Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0787US2026068625A1Vertical memory devices and method of fabrication thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0886US12519038B2Semiconductor device including a memory stack and a contact structure in a spacer structureYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Jan 6, 2026·0 cites·20 claims
- 0986US2026082553A1Three-dimensional memories and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1086US2026040587A1Three-dimensional memory devices having semiconductor assemblies bonded by bonding layer and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1186US2026089962A1Three-dimensional memory device, manufacturing method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1284US2026089963A1Three-dimensional nand memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1382US2026082563A1Memory system, semiconductor device and fabrication method thereforYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1481US12526996B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 13, 2026·0 cites·20 claims
- 1580US12526999B2Three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Jan 13, 2026·0 cites·20 claims
- 1674US12520494B2Three-dimensional memory device, manufacturing method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 1767US2026096097A1Semiconductor devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1866US12593445B2Control gate structures in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 31, 2026·0 cites·15 claims
- 1965US12597468B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 2065US12557299B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 2162US12598748B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 7, 2026·0 cites·20 claims
- 2261US12543310B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 2361US2026024557A1Semiconductor devices with stacked structuresYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2460US12591363B2Memory programming method, memory device, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Mar 31, 2026·0 cites·15 claims
- 2559US12557276B2Memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·15 claims
- 2658US12520488B2Three-dimensional memory device and fabrication method for improved yield and reliabilityYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·14 claims
- 2755US2026089929A1Memory device, fabrication method and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2854US12525558B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 13, 2026·0 cites·20 claims
- 2952US12557279B2Three-dimensional memory and fabrication method for the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·11 claims
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Identity basis: exact name match across USPTO filings. How scoring works →