Inventor · name-matched record
XIE RUILONG
75 granted patents·64 pending applications·1 citations·filing 2021–2024
97Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
139 records- 0192US12538553B2Contact structure for power delivery on semiconductor deviceIBM·Filed 2022·Granted Jan 27, 2026·1 cites·20 claims
- 0281US12568802B2Single diffusion cut for gate structuresGLOBALFOUNDRIES US INC·Filed 2023·Granted Mar 3, 2026·0 cites·17 claims
- 0371US12588487B2Tight pitch directional selective via growthIBM·Filed 2023·Granted Mar 24, 2026·0 cites·18 claims
- 0471US12557298B2Resistive random access memory on a buried bitlineIBM·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 0571US12550351B2Diffusion break between passive device and logic device with backside contactIBM·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 0668US12568814B2Buried power rail directly contacting backside power delivery networkIBM·Filed 2022·Granted Mar 3, 2026·0 cites·18 claims
- 0768US12568669B2Placeholder profile formation for backside contactIBM·Filed 2023·Granted Mar 3, 2026·0 cites·14 claims
- 0868US12557260B2Stacked-FET SRAM cell with bottom pFETIBM·Filed 2022·Granted Feb 17, 2026·0 cites·16 claims
- 0968US12557359B2Self-aligned backside contact with protruding source/drainIBM·Filed 2023·Granted Feb 17, 2026·0 cites·17 claims
- 1068US12557341B2Negative capacitance gate-all-around transistor with tunable capacitance ratioIBM·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 1168US12557356B2Semiconductor structure with fully wrapped-around backside contactIBM·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 1268US12557295B2Embedded ReRAM with backside contactIBM·Filed 2022·Granted Feb 17, 2026·0 cites·19 claims
- 1367US12598789B2Self-aligned backside contactINT BUSINESS MACHINES CORPORATION·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 1467US12588266B2CMOS integration for doped placeholder as direct backside contactIBM·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 1567US12588484B2Backside diffusion breakIBM·Filed 2023·Granted Mar 24, 2026·0 cites·25 claims
- 1667US12581723B2Backside power viaIBM·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
- 1767US12575157B2Nanosheet with dual isolation regions separated by buried inner spacerIBM·Filed 2022·Granted Mar 10, 2026·0 cites·24 claims
- 1867US12557627B2Stacked FET with bottom epi size control and wraparound backside contactIBM·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 1967US12550390B2Trench isolation for backside contact formationIBM·Filed 2023·Granted Feb 10, 2026·0 cites·19 claims
- 2067US12550376B2Work function metal patterning and middle-of-line self-aligned contacts for nanosheet technologyIBM·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 2166US12550713B2Hybrid buried power rail structure with dual front side and backside processingIBM·Filed 2022·Granted Feb 10, 2026·0 cites·18 claims
- 2265US12588273B2Stacked electronic devices having independent gatesIBM·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 2365US12588277B2Forming wrap around contact with self-aligned backside contactIBM·Filed 2023·Granted Mar 24, 2026·0 cites·13 claims
- 2465US12563972B2Magnetic tunnel junction pillar formation for MRAM deviceIBM·Filed 2021·Granted Feb 24, 2026·0 cites·10 claims
- 2565US12557320B2FVBP without backside Si recessIBM·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 2665US12557354B2Vertical field-effect transistor (FET) stacked over horizontal FETIBM·Filed 2022·Granted Feb 17, 2026·0 cites·10 claims
- 2765US12550715B2Heterogeneous integration of device die having BSPDNIBM·Filed 2023·Granted Feb 10, 2026·0 cites·14 claims
- 2864US12563776B2Forming source/drain contact in a tight tip-to-tip spaceIBM·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 2964US12557338B2Semiconductor structure having a backside contact with backside sidewall spacersIBM·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 3064US12557328B2Vertical-transport field-effect transistor with backside source/drain connectionsIBM·Filed 2022·Granted Feb 17, 2026·0 cites·19 claims
- 3164US12550719B2VTFET circuit with optimized outputIBM·Filed 2022·Granted Feb 10, 2026·0 cites·12 claims
- 3264US2026090021A1Deep via to preserve substrateIBM·Filed 2024·Application pending·0 cites
- 3364US2026101523A1Metal-insulator-metal capacitor with protection layerINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 3463US12593457B2Multi-state ferroelectric-RAM with stacked capacitorsIBM·Filed 2022·Granted Mar 31, 2026·0 cites·16 claims
- 3563US12563747B2Three dimensional ReRAM deviceIBM·Filed 2022·Granted Feb 24, 2026·0 cites·9 claims
- 3663US12550785B2Separated input/output (I/O) and shared power terminals for a carrier wafer with a built-in device for bonding with another device waferIBM·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 3763US12543544B2Backside direct contact formationIBM·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 3863US2026011603A1Backside contact with trench on backside substrate structureIBM·Filed 2024·Application pending·0 cites
- 3963US2026090109A1Stacked fet with recessed channel transistors at bottomIBM·Filed 2024·Application pending·0 cites
- 4063US2026090015A1Self aligned backside contactIBM·Filed 2024·Application pending·0 cites
- 4163US2026082630A1Self aligned backside channel removalIBM·Filed 2024·Application pending·0 cites
- 4263US2026013179A1Vertical nanosheet transistor with backside source/drain contactIBM·Filed 2024·Application pending·0 cites
- 4363US2026005141A1Optimized 3d integrated backside power delivery structureIBM·Filed 2024·Application pending·0 cites
- 4463US2026018518A1Backside trench isolation for high voltage device integrationIBM·Filed 2024·Application pending·0 cites
- 4563US2026059803A1Forksheet device with minimum gate metal and gate extensionIBM·Filed 2024·Application pending·0 cites
- 4663US2026047421A1Stacked multi-level memory with backside power distributionIBM·Filed 2024·Application pending·0 cites
- 4763US2026018508A1Backside deep trench capacitorIBM·Filed 2024·Application pending·0 cites
- 4863US2026090071A1Semiconductor device with stress liner and backside contactIBM·Filed 2024·Application pending·0 cites
- 4963US2026090038A1Forksheet transistor multilayer bottom isolation regionIBM·Filed 2024·Application pending·0 cites
- 5063US2026068222A1Backside contact without rx linerIBM·Filed 2024·Application pending·0 cites
Showing the top 50 of 139 patent records by PatentIndex Score.
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Identity basis: exact name match across USPTO filings. How scoring works →