Inventor · name-matched record
YANG HAINING
2 granted patents·2 pending applications·0 citations·filing 2022–2024
23Inventor score
Files withQUALCOMM INC4
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
4 records- 0160US12581692B2Transistor devices with double-side contactsQUALCOMM INC·Filed 2022·Granted Mar 17, 2026·0 cites·24 claims
- 0259US12575122B2Fin-based field effect transistor (FET) source/drain strain to enhance driver current and performanceQUALCOMM INC·Filed 2023·Granted Mar 10, 2026·0 cites·14 claims
- 0358US2026090059A1Semiconductor die including a transistor coupled to a contact layer wherein the contact layer includes a metal contact having a sidewall with a reduced height to promote connectivity with an adjacent viaQUALCOMM INC·Filed 2024·Application pending·0 cites
- 0456US2026068296A1Semiconductor die including a transistor coupled to a contact layer wherein the contact layer includes a metal contact having a sidewall with a reduced height to promote connectivity with an adjacent viaQUALCOMM INC·Filed 2024·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →