Inventor · name-matched record

YU HSIN-YUAN

1 granted patent·1 pending application·0 citations·filing 2023–2025

8Inventor score

Technology areasH10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD2

This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.

Top patents by PatentIndex Score

2 records

0160US12557396B2Device having nanostructure electrostatic discharge structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
0250US2026075962A1Dual-diode fail-safe input/output (fsio) scheme as electrostatic discharge (esd) fsio solutionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

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Identity basis: exact name match across USPTO filings. How scoring works →