Inventor · name-matched record
Zhou Huimei
4 granted patents·15 pending applications·0 citations·filing 2021–2024
53Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
19 records- 0171US12571837B2Semiconductor device with a protective diode connected to a fuseIBM·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 0268US12598986B2Metal insulator metal capacitor (MIM capacitor)INT BUSINESS MACHINES CORPORATION·Filed 2023·Granted Apr 7, 2026·0 cites·17 claims
- 0365US12550448B2Protection diode to prevent charge damage during MOLIBM·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 0464US2026090021A1Deep via to preserve substrateIBM·Filed 2024·Application pending·0 cites
- 0563US2026026038A1Isolation of epitaxial source/drain regionsIBM·Filed 2024·Application pending·0 cites
- 0662US2026005098A1Backside power delivery network heat dissipationIBM·Filed 2024·Application pending·0 cites
- 0762US2026013222A1Insulating plug in backside power delivery networkIBM·Filed 2024·Application pending·0 cites
- 0862US2026101536A1Transistor structure of transistors with shared gateINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 0962US2026059843A1Removing high-k layer from inner spacerIBM·Filed 2024·Application pending·0 cites
- 1062US2026018455A1Semiconductor device with a junction in backside power delivery networkIBM·Filed 2024·Application pending·0 cites
- 1162US2026011641A1Backside via to power rail via connectionIBM·Filed 2024·Application pending·0 cites
- 1262US2026005142A1Inner spacer as etch stop layer for backside power railIBM·Filed 2024·Application pending·0 cites
- 1361US2026040636A1Backside local well tapIBM·Filed 2024·Application pending·0 cites
- 1461US2026068608A1Inner spacer reliability evaluationIBM·Filed 2024·Application pending·0 cites
- 1560US2026075889A1Hybrid isolation pillarsIBM·Filed 2024·Application pending·0 cites
- 1658US12550371B2Separate gate complementary field-effect transistorIBM·Filed 2021·Granted Feb 10, 2026·0 cites·15 claims
- 1758US2026040649A1Direct backside contact to 2d material channel transistorIBM·Filed 2024·Application pending·0 cites
- 1858US2026075895A1Cmos integration of 2d channel materialsIBM·Filed 2024·Application pending·0 cites
- 1958US2026040673A1Stacked transistor with 2d material channelsIBM·Filed 2024·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →