Inventor · disambiguated record

Yoshikazu Kagata

Also filed as: KAGATA YOSHIKAZU

1 granted patent·16 citations·filing 1990–1990

37Inventor score

Technology areasH10P

Files withTOA GOSEI CHEM IND1

Top patents by PatentIndex Score

1 record

0140US5221412AVapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si filmTOA GOSEI CHEM IND·Filed 1990·Granted Jun 22, 1993·16 cites·1 claims

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