Inventor · disambiguated record

Mehdi Zamapian

Also filed as: ZAMANIAN MEHDI

1 granted patent·51 citations·filing 1994–1994

50Inventor score

Technology areasH10D

Files withSGS THOMSON MICROELECTRONICS1

Top patents by PatentIndex Score

1 record

0183US5422506AField effect transistor structure heavily doped source/drain regions and lightly doped source/drain regionsSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Jun 6, 1995·51 cites·7 claims

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