US10026670B1ActiveUtility

Power module

68
Assignee: MITSUBISHI ELECTRIC CORPPriority: Mar 2, 2017Filed: Oct 23, 2017Granted: Jul 17, 2018
Est. expiryMar 2, 2037(~10.6 yrs left)· nominal 20-yr term from priority
H10W 90/734H10W 76/47H10W 76/15H10W 90/701H10W 90/401H10W 90/00H10W 70/611H10W 40/255H10W 72/00H10W 40/22H01L 23/367H01L 25/065
68
PatentIndex Score
1
Cited by
66
References
5
Claims

Abstract

A power module includes: a relay substrate including a first conductor layer provided on a front surface and a second conductor layer provided on a back surface; copper blocks provided in holes penetrating through the relay substrate in a thickness direction and connecting the first conductor layer to the second conductor layer; semiconductor devices wherein each semiconductor device includes a main electrode provided at a location facing an end face of the corresponding copper block and only one copper block is electrically connected to one main electrode; an insulating substrate connected to back-surfaces of the semiconductor devices via joining materials; and a sealer sealing the relay substrate, the copper blocks, and the semiconductor devices.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. A power module comprising:
 a relay substrate including a first conductor layer provided on a front surface and a second conductor layer provided on a back surface; 
 copper blocks provided in holes penetrating through the relay substrate in a thickness direction and connecting the first conductor layer to the second conductor layer; 
 semiconductor devices wherein each semiconductor device includes a main electrode provided at a location facing an end face of the corresponding copper block and only one copper block is electrically connected to one main electrode; 
 an insulating substrate connected to back-surfaces of the semiconductor devices via joining materials; and 
 a sealer sealing the relay substrate, the copper blocks, and the semiconductor devices. 
 
     
     
       2. The power module according to  claim 1 , wherein the second conductor layer faces the semiconductor device, and
 the end face of the copper block facing the main electrode projects from the second conductor layer. 
 
     
     
       3. The power module according to  claim 1 , wherein an end part of the copper block is exposed from the sealer. 
     
     
       4. The power module according to  claim 3 , wherein the end part of the copper block exposed from the sealer has a terminal shape. 
     
     
       5. The power module according to  claim 1 , wherein the end face of the copper block facing the main electrode has a recess.

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