Method for producing an optoelectronic device with a contact area of accurately and reproducibly defined size

Abstract

An optoelectronic device is disclosed. In an embodiment the device includes a semiconductor crystal with a surface having a first lateral region, a second lateral region and a third lateral region, a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal and a first layer including a dielectric arranged on the surface in the third lateral region. The device further includes a second layer having an optically transparent, electrically conductive material arranged on the contact area, the first layer and the second lateral region of the surface and a third layer having a second metal arranged on the second layer.

What is claimed is: 
     
       1. An optoelectronic device comprising:
 a semiconductor crystal with a surface comprising a first lateral region, a second lateral region and a third lateral region, 
 a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal; 
 a first layer comprising a dielectric arranged on the surface in the third lateral region; 
 a second layer comprising an optically transparent, electrically conductive material arranged on the contact area, the first layer and the second lateral region of the surface; and 
 a third layer comprising a second metal arranged on the second layer. 
 
     
     
       2. The optoelectronic device according to  claim 1 , wherein a specific contact resistance between the second layer and the semiconductor crystal is at least one order of magnitude higher than a contact resistance between the contact area and the semiconductor crystal. 
     
     
       3. The optoelectronic device according to  claim 1 , wherein the second lateral region annularly surrounds the first lateral region at least in places. 
     
     
       4. The optoelectronic device according to  claim 1 , wherein the third lateral region at least in places annularly surrounds the second lateral region. 
     
     
       5. The optoelectronic device according to  claim 1 , wherein the optically transparent, electrically conductive material is a transparent, electrically conductive oxide. 
     
     
       6. The optoelectronic device according to  claim 1 , wherein at least one of the first metal and the second metal is gold or silver. 
     
     
       7. The optoelectronic device according to  claim 1 , wherein the dielectric comprises SiO 2 . 
     
     
       8. The optoelectronic device according to  claim 1 , wherein the third layer is electrically conductively connected to the contact area via the second layer. 
     
     
       9. The optoelectronic device according to  claim 1 , wherein the first lateral region and the second lateral region together form an uncovered lateral region where the surface of the semiconductor crystal is uncovered by the first layer. 
     
     
       10. The optoelectronic device according to  claim 9 , wherein the surface of the semiconductor crystal in the uncovered lateral region is uncovered by the third layer. 
     
     
       11. The optoelectronic device according to  claim 1 , wherein the second layer is completely covered by the third layer on a surface remote from the semiconductor crystal. 
     
     
       12. The optoelectronic device according to  claim 1 , wherein the first lateral region and the second lateral region are arranged at a bottom of an opening in the first layer. 
     
     
       13. The optoelectronic device according to  claim 12 , wherein the second layer covers a wall of the opening in the first layer. 
     
     
       14. An optoelectronic device comprising:
 a semiconductor crystal with a surface comprising a first lateral region, a second lateral region and a third lateral region, 
 a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal and being configured for electrically contacting the semiconductor crystal; 
 a first layer that comprises a dielectric arranged on the surface in the third lateral region, the dielectric serving as a mirror dielectric; 
 a second layer comprising a transparent, electrically conductive oxide arranged on the contact area, the first layer and the second lateral region of the surface; and 
 a third layer comprising a second metal arranged on the second layer and serving as a mirror layer. 
 
     
     
       15. An optoelectronic device comprising:
 a semiconductor crystal with a surface comprising a first lateral region, a second lateral region and a third lateral region, 
 a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal; 
 a first layer comprising a dielectric arranged on the surface in the third lateral region; 
 a second layer comprising an optically transparent, electrically conductive material arranged on the contact area, the first layer and the second lateral region of the surface; and 
 a third layer comprising a second metal arranged on the second layer, wherein a specific contact resistance between the second layer and the semiconductor crystal is at least one order of magnitude higher than a contact resistance between the contact area and the semiconductor crystal.