Trace/via hybrid structure with thermally and electrically conductive support material for increased thermal and electrical performance

Abstract

A method of forming an interconnect that includes providing a sacrificial trace structure using an additive forming method and forming a continuous seed metal layer on the sacrificial trace structure. The sacrificial trace structure is removed, and the continuous seed metal layer remains. An interconnect metal layer is formed on the continuous seed layer, and an electrically insulating material layer is formed on the interconnect metal layer. An electrically conductive support material is formed to encapsulate a majority of the interconnect metal layer, wherein the ends of the interconnect metal layer are exposed through opposing surfaces of the electrically conductive support material to provide an interconnect extending through the electrically conductive support material.

The invention claimed is: 
     
       1. A method of forming an interconnect comprising:
 providing a sacrificial trace structure using an additive forming method, the sacrificial trace structure having a geometry for the interconnect having at least one curved portion; 
 forming a continuous seed metal layer on the sacrificial trace structure; 
 removing the sacrificial trace structure, wherein the continuous seed metal layer remains; 
 forming an interconnect metal layer on the continuous seed metal layer, the interconnect metal layer having the at least one curved portion; 
 forming an electrically insulating material layer on the interconnect metal layer; and 
 forming an electrically conductive support material to encapsulate a majority of the interconnect metal layer, wherein the electrically insulating material layer isolates the interconnect metal layer from the electrically conductive support material, wherein ends of the interconnect metal layer are exposed through opposing surfaces of the electrically conductive support material to provide said interconnect extending through said electrically conductive support material. 
 
     
     
       2. The method of  claim 1 , wherein the electrically conductive support material is grounded. 
     
     
       3. The method of  claim 1 , wherein the sacrificial trace structure is comprised of a polymeric material. 
     
     
       4. The method of  claim 1 , wherein the sacrificial trace structure is formed using a three-dimensional additive method selected from the group consisting of stereolithography, self-propagating waveguide formation, fused deposition modeling (FDM), selective laser sintering (SLS), continuous liquid interface production (CLIP), digital light processing (DLP), material jetting, and combinations thereof. 
     
     
       5. The method of  claim 3 , wherein the continuous seed metal layer is composed of a metal selected from the group consisting of nickel, aluminum, copper, tantalum, titanium, platinum, gold, tin and combinations thereof. 
     
     
       6. The method of  claim 1 , wherein removing the sacrificial trace structure comprises dissolving polymeric material of the sacrificial trace structure. 
     
     
       7. The method of  claim 1 , wherein the interconnect metal layer is composed of a metal selected from the group consisting of nickel, aluminum, copper, tantalum, titanium, platinum, gold, tin and combinations thereof. 
     
     
       8. The method of  claim 7 , wherein the interconnect composed of the interconnect metal layer and the continuous seed metal layer have a solid core. 
     
     
       9. The method of  claim 7 , wherein the interconnect composed of the interconnect metal layer and the continuous seed metal layer have a hollow core. 
     
     
       10. The method of  claim 1 , wherein the electrically insulating material layer is a dielectric comprising an oxide, nitride or oxynitride formed by chemical vapor deposition or thermal growth processing. 
     
     
       11. The method of  claim 1 , wherein the electrically insulating material layer is a dielectric comprising a polymeric composition. 
     
     
       12. The method of  claim 1 , wherein the electrically conductive support material is a metal selected from the group consisting of copper, tungsten, aluminum, platinum, silver, tantalum, gold, tin and combinations thereof. 
     
     
       13. The method of  claim 1 , wherein said forming the electrically conductive support material comprises:
 physical vapor deposition or chemical vapor deposition of the electrically conductive support material; and 
 planarization of the electrically conductive support material to expose said ends of said interconnect metal layer. 
 
     
     
       14. A method of forming an interconnect comprising:
 providing a sacrificial trace structure using an additive forming method, the sacrificial trace structure having a geometry for the interconnect having a substantially uniform width and at least one non-linear portion provided by an angle in the interconnect; 
 forming a continuous seed metal layer on the sacrificial trace structure; removing the sacrificial trace structure, wherein the continuous seed metal layer remains; forming an interconnect metal layer on the continuous seed metal layer, the interconnect metal layer having said substantially uniform width and said at least one non-linear portion provided by said angle in the interconnect; 
 forming an electrically insulating material layer on the interconnect metal layer; and 
 forming an electrically conductive support material to encapsulate a majority of the interconnect metal layer, wherein the electrically insulating material layer isolates the interconnect metal layer from the electrically conductive support material, wherein ends of the interconnect metal layer are exposed through opposing surfaces of the electrically conductive support material to provide said interconnect having said at least one non-linear portion extending through said electrically conductive support material.