US10100435B2ActiveUtilityPatentIndex 50
Method for manufacturing diamond substrate
Est. expiryFeb 29, 2036(~9.7 yrs left)· nominal 20-yr term from priority
Inventors:NOGUCHI HITOSHISHIRAI SHOZOMAKINO TOSHIHARUOGURA MASAHIKOKATO HIROMITSUKAWASHIMA HIROYUKIKUWABARA DAISUKEYAMASAKI SATOSHITAKEUCHI DAISUKETOKUDA NORIOINOKUMA TAKAOMATSUMOTO TSUBASA
C30B 33/12C30B 29/04C30B 25/02C23C 16/27C30B 25/04C30B 25/186C30B 25/20H10P 50/692H10P 50/242H10P 14/3406H10P 14/2903H10P 14/276H10P 14/36H10P 14/24H01L 29/1602H01L 21/02658H01L 21/02527H01L 21/02376H01L 21/0262H10D 62/8303H10P 14/6902
50
PatentIndex Score
0
Cited by
12
References
7
Claims
Abstract
The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1. A method for manufacturing a diamond substrate, comprising:
a first step of preparing patterned diamond by growing diamond on a surface of a foundation, the surface being composed of a different material other than diamond, and processing the grown diamond to have a patterned shape,
wherein a bottom portion of a pattern gap of the patterned diamond is composed of a different material or at least a part of the bottom portion of the pattern gap is pierced through,
a second step of removing a foreign substance other than diamond adhered on a side wall of a pattern of the patterned diamond prepared in the first step, and
a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in the pattern gap of the patterned diamond prepared in the first step.
2. The method for manufacturing a diamond substrate according to claim 1 , wherein the foreign substance adhered on the wall of the patterned diamond is removed by using CF 4 plasma in the second step.
3. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is prepared in the first step with a ratio D/W of a depth D to a width W of the pattern gap being 0.1 or more.
4. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is prepared in the first step with at least a part of a bottom portion of the pattern gap being prepared below the foundation surface.
5. The method for manufacturing a diamond substrate according to claim 1 , wherein the diamond is grown by using a chemical vapor deposition method in the third step.
6. The method for manufacturing a diamond substrate according to claim 1 , wherein a void is formed in the diamond grown in the third step.
7. The method for manufacturing a diamond substrate according to claim 5 , wherein a void is formed in the diamond grown in the third step.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.