Contrast phantoms and uses thereof for active millimeter wave imaging systems

Abstract

The present disclosure is directed to a contrast phantom including: at least three regions including: a first region with a first reflection coefficient; a second region with a second reflection coefficient; and a third region with a third reflection coefficient, wherein at least one of the regions includes an electrically conductive material selected from a semiconductive oxide deposited onto a substrate and/or an electrically conductive polymer, wherein the first reflection coefficient, the second reflection coefficient and the third reflection coefficient are increasing or decreasing in value in discrete steps, and wherein the electrically conductive material includes a thickness of about 200 μm. Methods of using the present contrast phantom are also described.

I claim: 
     
       1. A contrast phantom comprising:
 at least three regions comprising:
 a first region with a first reflection coefficient, 
 a second region with a second reflection coefficient; and 
 a third region with a third reflection coefficient, wherein
 at least one of the regions comprises an electrically conductive material selected from the group consisting of a semiconductive oxide deposited onto a substrate and an electrically conductive polymer, wherein
 the electrically conductive material comprises a thickness of about 200 μm or less, and wherein 
 
 the first reflection coefficient, the second reflection coefficient and the third reflection coefficient are increasing or decreasing in value in discrete steps. 
 
 
 
     
     
       2. The contrast phantom of  claim 1 , wherein
 the electrically conductive material is the deposited semiconductive oxide. 
 
     
     
       3. The contrast phantom of  claim 2 , wherein
 the deposited semiconductive oxide comprises a doped metal oxide. 
 
     
     
       4. The contrast phantom of  claim 2 , wherein
 the deposited semiconductive oxide is selected from the group consisting of
 a tin-doped indium oxide, 
 an aluminum-doped zinc oxide, 
 an indium-doped cadmium oxide, 
 an indium-doped zinc oxide and 
 a gallium-doped zinc oxide. 
 
 
     
     
       5. The contrast phantom of  claim 2 , wherein
 the deposited semiconductive oxide is a tin-doped indium oxide. 
 
     
     
       6. The contrast phantom of  claim 1 , wherein
 at least one of the regions is/are supported by a radar absorbing material. 
 
     
     
       7. The contrast phantom of  claim 1 , wherein
 the contrast phantom is in a planar formation. 
 
     
     
       8. The contrast phantom of  claim 1 , wherein
 the contrast phantom is in a cylindrical formation. 
 
     
     
       9. A contrast phantom comprising:
 a first region with a first reflection coefficient and a first conductivity; 
 a second region with a second reflection coefficient and a second conductivity; 
 a third region with a third reflection coefficient and a third conductivity; 
 a fourth region with a fourth reflection coefficient and a fourth conductivity; and 
 a fifth region with a fifth reflection coefficient and a fifth conductivity; wherein
 at least one of the regions comprises a semiconductive oxide deposited onto a substrate, wherein
 the semiconductive oxide deposited onto the substrate comprises a thickness of about 200 μm or less, and wherein 
 
 the reflection coefficients increase or decrease in value incrementally and linearly in discrete steps. 
 
 
     
     
       10. The contrast phantom of  claim 9 , wherein
 the reflection coefficients range from 0 to 1. 
 
     
     
       11. The contrast phantom of  claim 9 , wherein
 the first region is a radar absorbing material and 
 the fifth region is a metal. 
 
     
     
       12. The contrast phantom of  claim 9 , wherein
 the deposited semiconductive oxide comprises a doped metal. 
 
     
     
       13. The contrast phantom of  claim 9 , wherein
 the deposited semiconductive oxide comprises a doped metal, wherein 
 at least one of the regions is the second region, the third region and the fourth region, and wherein
 an amount of the metal doped into the semiconductive oxide of the second region provides the second conductivity, 
 an amount of metal doped into the third region provides the third conductivity, and 
 an amount of metal doped into the semiconductive oxide of the fourth region provides the fourth conductivity. 
 
 
     
     
       14. The contrast phantom of  claim 13 , wherein
 the second region, the third region and the fourth region are supported by a radar absorbing material. 
 
     
     
       15. The contrast phantom of  claim 9 , wherein
 the substrate is polyethylene terephthalate. 
 
     
     
       16. A method of testing a contrast resolution sufficiency of an active millimeter wave imaging system comprising:
 selecting at least a first, a second and a third material, wherein
 the first material comprises a first reflection coefficient, the second material comprises a second reflection coefficient, and the third material comprises a third reflection coefficient, wherein 
 at least one of the first material, the second material or the third material comprise(s) at least one selected from the group consisting of a semiconductive oxide deposited onto a substrate and an electrically conductive polymer, 
 
 arranging the first, second and third materials into regions so that the first, second and third reflection coefficients increase or decrease in value; and 
 imaging the materials with the active millimeter wave imaging system, and 
 determining the presence or absence of contrast resolution between the regions, thereby testing the contrast resolution sufficiency of the active millimeter wave imaging system. 
 
     
     
       17. The method of  claim 16 , wherein
 the method further comprises calibrating the active millimeter wave imaging system. 
 
     
     
       18. The method according to  claim 16 , wherein
 the materials are attached to a support post and wherein the reflection coefficients range from 0 to 1. 
 
     
     
       19. The method of  claim 18 , wherein
 the deposited semiconductive oxide is a tin-doped indium oxide. 
 
     
     
       20. The method of  claim 18 , wherein
 the second material, the third material and the fourth material are supported by a radar absorbing material. 
 
     
     
       21. The method according to  claim 16 , wherein selecting the at least first, second and third material further comprises:
 selecting a fourth material with a fourth reflectivity; and 
 selecting a fifth material with a fifth reflectivity. 
 
     
     
       22. The method of  claim 16 , wherein
 the deposited semiconductive oxide comprises a doped metal oxide.