US10256164B2ActiveUtilityA1
Semiconductor film and field effect transistor having semiconductor and polymer portions stacked adjacent each other
Est. expiryAug 29, 2034(~8.1 yrs left)· nominal 20-yr term from priority
H10W 90/00H10W 70/68H10W 70/69H01L 51/0558H01L 29/786H01L 51/0003H01L 25/00H01L 23/13H01L 23/14H01L 51/052H10D 30/67H10K 71/12H10K 10/471H10K 10/484
70
PatentIndex Score
2
Cited by
16
References
3
Claims
Abstract
The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1. A semiconductor film comprising:
a semiconductor portion that is formed from an organic semiconductor material and comprises crystals and has a width of 1 mm or more; and
a polymer portion that is formed from a polymer material, wherein:
each of the semiconductor portion and the polymer portion has a layer shape, and the semiconductor portion and the polymer portion are stacked adjacent to each other in a stacking direction,
an angle between orientation axes of the crystals is 10 degrees or less, and
each crystal has a length of 200 μm or more.
2. The semiconductor film according to claim 1 , wherein the semiconductor portion is a single crystal.
3. A field effect transistor comprising the semiconductor film according to claim 1 .Cited by (0)
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