US10326159B2ActiveUtilityPatentIndex 45
Battery, a battery element and a method for forming a battery
Est. expiryMar 28, 2034(~7.7 yrs left)· nominal 20-yr term from priority
H01M 50/533H01M 2220/30Y10T29/49115Y02P70/54H01M 2220/20H01M 4/664H01M 4/587H01M 2/1061G06F 1/1635H01M 10/0436Y02T10/7011H01M 6/40H01M 4/386H01M 10/4257H01M 10/0562H01M 4/525H01M 10/0585H01M 2300/0068H01M 4/134H01M 10/052H01M 2/1077H01M 4/131H01M 10/058H01M 4/133Y02E60/122H01M 2/26Y02P70/50Y02E60/10Y02T10/70
45
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25
References
16
Claims
Abstract
A battery, a battery element and a method for forming a battery element are provided. In an embodiment, a battery element includes a substrate with a plurality of trenches extending into the substrate, wherein a part of a trench of the plurality of trenches is filled with a solid state battery structure, and wherein the trench of the plurality of trenches comprises a cavity.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A method for forming a battery, the method comprising:
providing a wafer comprising at least two wafer electrodes, wherein the wafer comprises a plurality of trenches extending from a surface of the wafer into the wafer, wherein at least a part of a trench of the plurality of trenches is filled with a solid state battery structure, wherein the solid state battery structures within the trenches comprise electrodes electrically connected to the wafer electrodes; and
forming a battery package comprising two externally accessible battery electrodes to provide a supply voltage to a connectable device, wherein the two externally accessible battery electrodes reach through the battery package.
2. The method of claim 1 , further comprising separating the wafer to obtain a remaining part of the wafer with a desired geometry, wherein the remaining part of the wafer is at least more than half of a front side of the wafer and comprises the two wafer electrodes.
3. A method for forming a battery, the method comprising:
providing a wafer;
removing a portion of the wafer to form a substrate so that the substrate includes at least half of a front side of the wafer;
forming at least two wafer electrodes in the substrate, wherein the substrate with the wafer electrodes comprises a plurality of trenches extending into the substrate, wherein at least a part of a trench of the plurality of trenches is filled with a solid state battery structure; and
forming at least two externally accessible battery electrodes to provide a supply voltage of the battery, wherein the solid state battery structure within the trench comprises electrodes electrically connected to the wafer electrodes.
4. The method of claim 3 , wherein the at least half of the front side of the wafer comprises at least 70% of the front side of the wafer.
5. The method of claim 3 , wherein the at least half of the front side of the wafer comprises at least 80% of the front side of the wafer.
6. The method of claim 3 , wherein the at least half of the front side of the wafer comprises at least 90% of the front side of the wafer.
7. The method of claim 3 , wherein the substrate is cut so that the substrate has a quadratic shape.
8. The method of claim 3 , wherein the substrate is cut so that the substrate has a rectangular shape.
9. The method of claim 3 , wherein the substrate further includes a control circuit and electrically connected to the two wafer electrodes.
10. The method of claim 3 , further comprising encapsulating the substrate with a battery package.
11. The method of claim 10 , further comprising a control circuit disposed on a separate die and located within the battery package, and electrically connected to the two externally accessible battery electrodes.
12. The method of claim 3 , wherein the substrate comprises a semiconductor material or a glass material.
13. The method of claim 3 , wherein the substrate comprises a first wafer electrode of the two wafer electrodes at a front side of the substrate and a second wafer electrode of the two wafer electrodes at a back side of the substrate.
14. The method of claim 3 , wherein the trenches are etched with a crystal orientation depending etch.
15. The method of claim 3 , wherein the trenches have a quadratic pattern.
16. The method of claim 3 , wherein the trenches have a hexagonal pattern.Cited by (0)
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