Semiconductor light-emitting device having a transparent cover layer tail portion

Abstract

A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.

What is claimed is: 
     
       1. A semiconductor light-emitting device, comprising
 a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; 
 a reflective electrode layer covering an upper surface of the second semiconductor layer; and 
 a transparent cover layer covering the upper surface of the second semiconductor layer and an upper surface of the reflective electrode layer, wherein the transparent cover layer includes a tail portion including a first portion and a second portion, the first portion covering an edge of the reflective electrode layer and a convex upper surface, the second portion being thinner than and extending from the first portion. 
 
     
     
       2. The semiconductor light-emitting device as claimed in  claim 1 , wherein the first portion of the transparent cover layer is thicker than other portions around the first portion of the transparent cover layer. 
     
     
       3. The semiconductor light-emitting device as claimed in  claim 1 , wherein the transparent cover layer has:
 a first thickness at a center with respect to a horizontal direction, 
 a second thickness being less than the first thickness on a portion around the edge of the reflective electrode layer, which is an inner portion than the first portion, 
 a third thickness being less than the first thickness and greater than the second thickness on the first portion, and 
 a fourth thickness being less than the third thickness on the second portion. 
 
     
     
       4. The semiconductor light-emitting device as claimed in  claim 1 , further comprising
 a plurality of insulating patterns spaced apart from each other between the second semiconductor layer and the reflective electrode layer, the plurality of insulating patterns having an omni-directional reflector (ODR) structure with the reflective electrode layer. 
 
     
     
       5. The semiconductor light-emitting device as claimed in  claim 1 , wherein:
 the light-emitting structure includes a mesa structure defined by a plurality of trenches exposing a lower surface portion of the first semiconductor layer, and 
 the edge of the reflective electrode layer is spaced apart from an edge of an upper surface of the mesa structure. 
 
     
     
       6. The semiconductor light-emitting device as claimed in  claim 5 , wherein an edge of the transparent cover layer is spaced apart from the edge of the upper surface of the mesa structure. 
     
     
       7. The semiconductor light-emitting device as claimed in  claim 6 , wherein:
 a first distance corresponds to a distance between the edge of the upper surface of the mesa structure and the edge of the transparent cover layer, 
 a second distance corresponds to a distance between the edge of the upper surface of the mesa structure and the edge of the reflective electrode layer, and 
 the first distance is less than the second distance. 
 
     
     
       8. The semiconductor light-emitting device as claimed in  claim 7 , wherein a value of the first distance is greater than 0 μm and less than 2 μm. 
     
     
       9. The semiconductor light-emitting device as claimed in  claim 1 , further comprising:
 an insulating structure covering an upper surface of the first semiconductor layer and the upper surface of the second semiconductor layer around the transparent cover layer; 
 a first interconnection conductive layer electrically connected to the first semiconductor layer through the insulating structure; and 
 a second interconnection conductive layer electrically connected to the reflective electrode layer through the insulating structure. 
 
     
     
       10. The semiconductor light-emitting device as claimed in  claim 9 , wherein:
 the transparent cover layer includes an insulating material, and 
 the second interconnection conductive layer contacts the reflective electrode layer through the transparent cover layer. 
 
     
     
       11. The semiconductor light-emitting device as claimed in  claim 9 , wherein:
 the transparent cover layer includes a conductive oxide, and 
 the second interconnection conductive layer contacts the transparent cover layer. 
 
     
     
       12. The semiconductor light-emitting device as claimed in  claim 9 , wherein the transparent cover layer includes:
 a lower transparent cover layer covering the reflective electrode layer and includes a conductive oxide, and 
 an upper transparent cover layer covering the lower transparent cover layer and including an insulating material, and 
 wherein the second interconnection conductive layer contacts the lower transparent cover layer through the upper transparent cover layer. 
 
     
     
       13. A semiconductor light-emitting device, comprising
 a light-emitting structure including a first semiconductor layer, an active layer, a second semiconductor layer, and a mesa structure defined by a plurality of trenches exposing a lower surface portion of the first semiconductor layer; 
 a reflective electrode layer covering an upper surface of the mesa structure and spaced apart from an edge of the upper surface of the mesa structure; and 
 a transparent cover layer covering at least a portion of the reflective electrode layer and a portion of an upper surface of the second semiconductor layer, wherein the transparent cover layer is thicker than adjacent portions around an edge of the reflective electrode layer, and wherein an edge of the transparent cover layer is spaced apart from the edge of the upper surface of the mesa structure and positioned on the upper surface of the mesa structure. 
 
     
     
       14. The semiconductor light-emitting device as claimed in  claim 13 , wherein a distance between the edge of the upper surface of the mesa structure and an edge of the transparent cover layer is less than a distance between the edge of the upper surface of the mesa structure and the edge of the reflective electrode layer. 
     
     
       15. The semiconductor light-emitting device as claimed in  claim 13 , further comprising:
 an insulating structure covering the lower surface portion of the first semiconductor layer and the upper surface of the second semiconductor layer; 
 a first interconnection conductive layer in contact with the lower surface portion of the first semiconductor layer through the insulating structure; and 
 a second interconnection conductive layer electrically connected to the reflective electrode layer through the insulating structure. 
 
     
     
       16. The semiconductor light-emitting device as claimed in  claim 15 , wherein:
 the transparent cover layer includes an insulating material, and 
 the second interconnection conductive layer contacts the reflective electrode layer through the transparent cover layer. 
 
     
     
       17. The semiconductor light-emitting device as claimed in  claim 15 , wherein:
 the transparent cover layer includes a conductive oxide, and 
 the second interconnection conductive layer contacts the transparent cover layer. 
 
     
     
       18. The semiconductor light-emitting device as claimed in  claim 15 , wherein:
 the transparent cover layer includes a lower transparent cover layer including a conductive oxide, and an upper transparent cover layer covering the lower transparent cover layer and including an insulating material, and 
 the second interconnection conductive layer contacts the lower transparent cover layer through the upper transparent cover layer. 
 
     
     
       19. A semiconductor light-emitting device, comprising
 a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer and having a mesa structure defined by a plurality of trenches exposing a lower surface portion of the first semiconductor layer; 
 a reflective electrode layer covering an upper surface of the mesa structure and spaced apart from an edge of the upper surface of the mesa structure; 
 a transparent cover layer covering at least a portion of the reflective electrode layer and a portion of an upper surface of the second semiconductor layer and spaced apart from the edge of the upper surface of the mesa structure; 
 an insulating structure covering an upper surface of the first semiconductor layer and the upper surface of the second semiconductor layer around the transparent cover layer; 
 a first interconnection conductive layer electrically connected to the first semiconductor layer through the insulating structure; and 
 a second interconnection conductive layer electrically connected to the reflective electrode layer through the insulating structure, wherein the transparent cover layer includes a first portion and a second portion covering the portion of the upper surface of the second semiconductor layer, the first portion including an upper surface that upwardly protrudes at a higher level than adjacent upper surfaces around an edge of the reflective electrode layer, the second portion having a concave upper surface. 
 
     
     
       20. The semiconductor light-emitting device as claimed in  claim 19 , wherein a distance between the edge of the upper surface of the mesa structure and the edge of the reflective electrode layer is greater than a distance between the edge of the upper surface of the mesa structure and an edge of the transparent cover layer and has a value greater than 0 μm and less than 2 μm.