US10355193B2ActiveUtilityA1
Flip chip integration on qubit chips
Est. expiryNov 28, 2037(~11.4 yrs left)· nominal 20-yr term from priority
Inventors:Sami RosenblattJason S. OrcuttMartin O. SandbergMarkus BrinkVivekananda P. AdigaNicholas Torleiv Bronn
H10W 90/722H10W 90/297H10W 90/295H10W 72/07236H10W 72/07232H10W 72/252H10W 46/301H10W 46/00H10W 90/00H10N 60/0912B82Y 10/00H01L 2225/06513G06N 10/00H01L 23/544H01L 25/50H01L 39/045H01L 27/18H01L 39/025H01L 2225/06541H01L 39/2493H01L 25/0657H01L 39/223H01L 2223/54426H10D 48/3835G06N 10/40H10N 69/00H10N 60/805H10N 60/12H10N 60/815
96
PatentIndex Score
12
Cited by
104
References
20
Claims
Abstract
A quantum bit (qubit) flip chip assembly may be formed when a qubit it formed on a first chip and an optically transmissive path is formed on a second chip. The two chips may be bonded using solder bumps. The optically transmissive path may provide optical access to the qubit on the first chip.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A method for forming a quantum bit (qubit) flip-chip assembly, the method comprising:
forming a qubit on a first chip;
forming an optically transmissive path in a second chip; and
bonding the first chip to the second chip; and
wherein the optically transmissive path is located above the qubit.
2. The method of claim 1 , wherein the path has an aperture with a diameter large enough to allow for treatment of the qubit.
3. The method of claim 1 , wherein the optically transmissive path has an aperture of 100 microns or less.
4. The method of claim 1 , further comprising laser annealing the qubit by applying a laser through a surface of the qubit chip that is opposite the second chip.
5. The method of claim 1 , further comprising ion etching the qubit.
6. The method of claim 1 , wherein the forming the optically transmissive path comprises drilling, using a high-power laser beam, the second chip to form a through-hole in the second chip.
7. The method of claim 6 , wherein the etching comprises deep-reactive ion etching.
8. The method of claim 6 , wherein the etching comprises a chemical etch, and wherein the chemical etch is a tetramethylammonium hydroxide (TMAH) etch.
9. The method of claim 1 , wherein the forming the optically transmissive path comprises etching a through-hole in the second chip.
10. The method of claim 1 , wherein the second chip comprises a transparent substrate.
11. The method of claim 10 , wherein the transparent substrate is Magnesiumoxide (MgO).
12. A flip chip apparatus comprising:
a first chip comprising a qubit;
a second chip bonded to the first chip, wherein the first chip and the second chip are bonded by a plurality of solder bumps; and
wherein an optically transmissive path in the second chip provides for optical access to the qubit on the first chip.
13. The apparatus of claim 12 , wherein the second chip comprises a transparent substrate.
14. The apparatus of claim 13 , wherein the transparent substrate is sapphire.
15. The apparatus of claim 12 , wherein the optically transmissive path has a diameter large enough to allow for treatment of one or more of the plurality of qubits.
16. The apparatus of claim 12 , wherein the qubit is accessible for laser annealing via the optically transmissive path.
17. The apparatus of claim 12 , wherein the optically transmissive path of the second chip is aligned with the qubit on the first chip.
18. The apparatus of claim 12 , wherein the optically transmissive path is formed with a chemical etch.
19. The apparatus of claim 12 , wherein the optically transmissive path is formed using a high-power laser beam.
20. The apparatus of claim 12 , wherein the first chip is comprised of a transparent substrate.Cited by (0)
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