Electronic device and methods of fabricating the same

Abstract

Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

What is claimed is: 
     
       1. A method of fabricating an electronic device, the method comprising:
 providing on a substrate a channel layer including a two-dimensional material; 
 providing a metal fiber layer on a first surface of a conductive layer; 
 placing the conductive layer and the metal fiber layer on the channel layer, such that the first surface of the conductive layer faces the channel layer and the metal fiber layer is provided on the channel layer; and 
 covalently bonding a portion of the metal fiber layer to a portion of the channel layer by a thermal treatment process, and forming a junction layer between the metal fiber and the channel layer. 
 
     
     
       2. The method of  claim 1 , wherein providing the metal fiber layer comprises electro-spinning a spray solution including an ohmic metal material on the first surface. 
     
     
       3. The method of  claim 2 , wherein the ohmic metal material comprises at least one of Mo, W, Ni, Pd, or Ti. 
     
     
       4. The method of  claim 1 , wherein the metal fiber layer is provided in a grid shape or an irregular shape on the first surface. 
     
     
       5. The method of  claim 1 , wherein the two-dimensional material comprises at least one of molybdenum disulfide (MoS2), tungsten disulfide (WS2), molybdenum diselenide (MoSe2), tungsten diselenide (WSe2), black phosphor, or graphene. 
     
     
       6. The method of  claim 1 , further comprising providing a gate insulating layer on the channel layer. 
     
     
       7. The method of  claim 6 , further comprising etching a portion of the conductive layer and a portion of the metal fiber layer, wherein the portions of the conductive layer and the metal fiber layer are adjacent to a boundary of the gate insulating layer. 
     
     
       8. The method of  claim 1 , wherein the conductive layer comprises at least one of graphene, graphite, or carbon nanotube. 
     
     
       9. The method of  claim 1 , wherein
 the conductive layer is provided on a collector substrate, and 
 the method further comprises, after providing the metal fiber layer on the first surface, separating the conductive layer from the collector substrate.