Operation methods of nonvolatile memory devices and operation methods of memory controllers

Abstract

An operation method performed at a nonvolatile memory device may include receiving a program command and an address from an external device through a data signal (DQ), receiving a specific pattern from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period, receiving user data from the external device through the data signal and the data strobe signal in a data period, and selectively performing a program operation on the user data or a recovery operation based on a determination of whether the specific pattern matches with a particular pattern. A rising edge or a falling edge of the data strobe signal may be aligned with a left edge or a right edge of a window of the data signal in the pattern period.

What is claimed is: 
     
       1. An operation method of a nonvolatile memory device, the method comprising:
 receiving a program command and an address at the nonvolatile memory device from an external device through a data signal (DQ); 
 receiving a specific pattern at the nonvolatile memory device from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period, wherein a rising edge or a falling edge of the data strobe signal is aligned with a left edge or a right edge of a window of the data signal in the pattern period; 
 receiving user data at the nonvolatile memory device from the external device through the data signal and the data strobe signal in a data period; and 
 selectively performing a program operation on the user data or a recovery operation at the nonvolatile memory device based on a determination of whether the specific pattern matches with a particular pattern. 
 
     
     
       2. The method of  claim 1 , wherein a length of the pattern period corresponds to a particular period of the data strobe signal. 
     
     
       3. The method of  claim 1 , further comprising:
 processing the program operation as program failure without the program operation on the user data at the nonvolatile memory device based on a determination that the specific pattern does not match with the particular pattern. 
 
     
     
       4. The method of  claim 3 , further comprising:
 providing information associated with the program failure from the nonvolatile memory device to the external device as status information based on a request of the external device. 
 
     
     
       5. The method of  claim 4 , further comprising:
 providing the status information from the nonvolatile memory device to the external device in response to a determination that a program confirm command is received at the nonvolatile memory device from the external device. 
 
     
     
       6. The method of  claim 4 , further comprising:
 providing the status information from the nonvolatile memory device to the external device prior to a program confirm command being received at the nonvolatile memory device from the external device. 
 
     
     
       7. The method of  claim 1 , wherein the recovery operation includes a re-training operation performed at the nonvolatile memory device under control of the external device. 
     
     
       8. The method of  claim 7 , wherein the re-training operation includes at least one of a ZQ calibration operation, a duty cycle correction (DCC) training operation, a read training operation, or a write training operation. 
     
     
       9. The method of  claim 7 , wherein the data strobe signal is center-aligned with the data signal as a result of the re-training operation. 
     
     
       10. The method of  claim 1 , further comprising:
 receiving dummy data at the nonvolatile memory device from the external device through the data signal and the data strobe signal in a dummy period prior to the pattern period. 
 
     
     
       11. An operation method of a nonvolatile memory device, the method comprising:
 receiving a program command and an address at the nonvolatile memory device from an external device through a data signal (DQ); 
 receiving a specific pattern at the nonvolatile memory device from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period; 
 receiving user data and a cyclic redundancy check (CRC) code at the nonvolatile memory device from the external device through the data signal and the data strobe signal in a data period; and 
 selectively performing a program operation on the user data or a recovery operation at the nonvolatile memory device based on a determination of whether the specific pattern does not match with a particular pattern and an error is detected from the user data based on the CRC code. 
 
     
     
       12. The method of  claim 11 , further comprising:
 processing the program operation as program failure without performing the program operation on the user data at the nonvolatile memory device based on a determination that the specific pattern does not match with the particular pattern or if the error is detected from the user data based on the CRC code. 
 
     
     
       13. The method of  claim 12 , further comprising:
 providing information associated with the program failure from the nonvolatile memory device to the external device as status information. 
 
     
     
       14. The method of  claim 11 , further comprising:
 receiving dummy data at the nonvolatile memory device from the external device through the data signal and the data strobe signal during a dummy period prior to the pattern period. 
 
     
     
       15. The method of  claim 14 , wherein a length of the pattern period and a length of the dummy period is defined based on a set feature operation. 
     
     
       16. An operation method of a memory controller to control a nonvolatile memory device, the method comprising:
 transmitting a command and an address from the memory controller to the nonvolatile memory device through a data signal; 
 transmitting a specific pattern from the memory controller to the nonvolatile memory device through the data signal and a data strobe signal synchronized with the data signal in a pattern period, wherein a rising edge or a falling edge of the data strobe signal is aligned with a left edge or a right edge of a window of the data signal in the pattern period; 
 transmitting user data from the memory controller to the nonvolatile memory device through the data signal and the data strobe signal in a data period; 
 receiving status information at the memory controller from the nonvolatile memory device; and 
 performing a recovery operation on the nonvolatile memory device in response to the status information. 
 
     
     
       17. The method of  claim 16 , wherein the status information includes information associated with a mismatch between the specific pattern and a particular pattern. 
     
     
       18. The method of  claim 16 , wherein the status information includes information associated with program failure of a program operation associated with the user data. 
     
     
       19. The method of  claim 16 , wherein the specific pattern is a pattern that is based on a value of the address. 
     
     
       20. The method of  claim 16 , wherein the recovery operation includes a re-training operation with the nonvolatile memory device.