Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device 1 includes a semiconductor chip 2, a plurality of leads 4, disposed in a periphery of the semiconductor chip 2, and a sealing resin 5, sealing the semiconductor chip 2 and the leads 4 such that lower surfaces 18 and outer end surfaces 20 at sides opposite the semiconductor chip 2 of the leads 4 are exposed. Lead plating layers 21 arranged to improve solder wettability are formed on the lower surfaces 18 and the outer end surfaces 20 of the leads 4.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a semiconductor chip; 
 a plurality of leads, disposed in a periphery of the semiconductor chip; and 
 a sealing resin, sealing the semiconductor chip and the leads such that lower surfaces and outer end surfaces of the leads, at sides opposite the semiconductor chip, are exposed; 
 wherein 
 lead plating layers arranged to improve solder wettability are formed on the lower surfaces and the outer end surfaces of the leads, and 
 front surfaces of the lower surfaces of the plurality of leads excluding the lead plating layers are at higher height positions than a lower surface of the sealing resin. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the plurality of leads are constituted of a metal that contains copper. 
     
     
       3. The semiconductor device according to  claim 1 , wherein a material constituting the lead plating layers contains Pd. 
     
     
       4. The semiconductor device according to  claim 1 , wherein burrs are not formed on the outer end surfaces of the leads. 
     
     
       5. The semiconductor device according to  claim 1 , wherein an end surface shape of the outer end surface of each of the leads excluding the lead plating layer is substantially the same as a cross-sectional shape of the lead disposed inside the sealing resin. 
     
     
       6. The semiconductor device according to  claim 1 , wherein the plurality of leads are disposed so as to be aligned at intervals at each of sides sandwiching the semiconductor chip. 
     
     
       7. The semiconductor device according to  claim 1 , further comprising:
 a die pad, which has an upper surface and a lower surface, the semiconductor chip being die bonded to the upper surface of the die pad, and which is sealed by the sealing resin such that the lower surface of the die pad is exposed at the lower surface of the sealing resin; and 
 a die pad plating layer, arranged to improve solder wettability and formed on the lower surface of the die pad. 
 
     
     
       8. The semiconductor device according to  claim 1 , wherein the semiconductor device is a semiconductor device applying a QFN (Quad Flat Non-leaded Package). 
     
     
       9. The semiconductor device according to  claim 1 , wherein the semiconductor device is a semiconductor device applying an SON (Small Outlined Non-leaded Package). 
     
     
       10. The semiconductor device according to  claim 1 , wherein
 the lower surfaces of the leads are exposed at the lower surface of the sealing resin, and the sealing resin further has an upper surface, at a side opposite the lower surface, and a side surface, which is continuous to the upper surface and the lower surface and at which the outer end surfaces of the leads are exposed, 
 the side surface of the sealing resin includes a first side surface portion, disposed near the lower surface of the sealing resin, and a second side surface portion, disposed near the upper surface of the sealing resin, 
 a step is formed between the first side surface portion and the second side surface portion such that the second side surface portion protrudes further outward than the first side surface portion, and 
 in regard to an up-down direction position of the sealing resin, the step is positioned between upper surfaces of the leads and the upper surface of the sealing resin. 
 
     
     
       11. The semiconductor device according to  claim 10 , wherein an amount of protrusion of the second side surface portion with respect to the first side surface portion is not more than 50 μm. 
     
     
       12. The semiconductor device according to  claim 7 , wherein the die pad is constituted of a metal that contains copper. 
     
     
       13. The semiconductor device according to  claim 7 , wherein a material constituting the die pad plating layer contains Pd. 
     
     
       14. The semiconductor device according to  claim 7 , wherein a front surface of the lower surface of the die pad excluding the die pad plating layer is at a higher height position than the lower surface of the sealing resin.