Method of manufacturing semiconductor device and semiconductor device

Abstract

To enhance reliability of a test by suppressing defective bonding of a solder in the test of a semiconductor device, a method of manufacturing the semiconductor device includes: preparing a semiconductor wafer that includes a first pad electrode provided with a first cap film and a second pad electrode provided with a second cap film. Further, a polyimide layer that includes a first opening on the first pad electrode and a second opening on the second pad electrode is formed, and then, a rearrangement wiring that is connected to the second pad electrode via the second opening is formed. Next, an opening is formed in the polyimide layer such that an organic reaction layer remains on each of the first pad electrode and a bump land of the rearrangement wiring, then heat processing is performed on the semiconductor wafer, and then, a bump is formed on the rearrangement wiring.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device comprising:
 (a) forming a pad over a semiconductor substrate; 
 (b) forming a first insulating film over the semiconductor substrate, the first insulating film having a first opening exposing a first region of the pad and a second opening exposing a second region of the pad different from the first region; 
 (c) forming a metal film connected to the pad in the second opening, while covering the first opening with a mask layer; 
 (d) forming a second insulating film over the first insulating film so as to expose a part of the metal film; and 
 (e) disposing a conductive material on the part of the metal film exposed by the second insulating film, wherein 
 the step (d) comprises:
 (d1) forming the second insulating film over the first insulating film, 
 (d2) after the (d1), performing a probe test by using a probe needle, and 
 (d3) after the (d2), removing an organic reaction layer derived from the second insulating film remained on the part of the metal film. 
 
 
     
     
       2. The method of manufacturing a semiconductor device according to  claim 1 , wherein, in the step (d3), the organic reaction layer is removed by ashing. 
     
     
       3. The method of manufacturing a semiconductor device according to  claim 1 , wherein, before the step (d3), a thickness of the organic reaction layer derived from the second insulating film remained on the part of the metal film is about 100 nm. 
     
     
       4. The method of manufacturing a semiconductor device according to  claim 1 , wherein the step (d) further comprises step (d4) performing heat processing, after performing the step (d2) and before performing the step (d3), and
 wherein a temperature of the heat processing is greater than a melting point of the conductive material. 
 
     
     
       5. The method of manufacturing a semiconductor device according to  claim 1 , wherein the pad has a rectangular planar shape. 
     
     
       6. The method of manufacturing a semiconductor device according to  claim 1 , wherein the second insulating film is comprised of polyimide. 
     
     
       7. The method of manufacturing a semiconductor device according to  claim 1 , wherein a size of the first opening is larger than a size of the second opening in plan view. 
     
     
       8. The method of manufacturing a semiconductor device according to  claim 1 , wherein the metal film is comprised of a Cu layer and a Ni layer formed on the Cu layer. 
     
     
       9. The method of manufacturing a semiconductor device according to  claim 1 , wherein the pad is an Al pad. 
     
     
       10. The method of manufacturing a semiconductor device according to  claim 1 , wherein the second insulating film has a fourth opening communicating with the first opening. 
     
     
       11. The method of manufacturing a semiconductor device according to  claim 1 , wherein the second insulating film has a third opening communicating with the second opening. 
     
     
       12. The method of manufacturing a semiconductor device according to  claim 1 , wherein the conductive material is a bump.