Wavelength conversion member, method of manufacturing the same, and backlight assembly including the same

Abstract

A wavelength conversion member is disclosed. In one aspect, the wavelength conversion member includes a first substrate, a second substrate formed over the first substrate, and a wavelength conversion layer interposed between the first and second substrates. A sealant is interposed between the first and second substrates and surrounds the wavelength conversion layer.

What is claimed is: 
     
       1. A method of manufacturing a wavelength conversion member for a display device, the method comprising:
 providing a first substrate; 
 forming a wavelength conversion layer and a bank over the first substrate, wherein the bank surrounds the wavelength conversion layer; 
 placing a second substrate over the wavelength conversion layer and the bank; and 
 sintering the bank after the forming of the wavelength conversion layer, 
 wherein the wavelength conversion layer comprises a plurality of quantum dots, and 
 wherein the wavelength conversion layer further comprises an inert gas filling a space between the quantum dots and dispersed in the wavelength conversion layer. 
 
     
     
       2. The method of  claim 1 , wherein the forming comprises:
 forming the bank along edges of the first substrate; and 
 forming the wavelength conversion layer on a region of the first substrate defined by the bank. 
 
     
     
       3. The method of  claim 2 , wherein the wavelength conversion layer and the bank are formed by a printing process or a coating process. 
     
     
       4. The method of  claim 1 , wherein the sintering comprises irradiating a laser beam onto the bank. 
     
     
       5. The method of  claim 1 , wherein the wavelength conversion layer directly contacts the first substrate or the second substrate. 
     
     
       6. The method of  claim 1 , wherein the wavelength conversion layer has a thickness of about 10 μm to about 20 μm. 
     
     
       7. The method of  claim 1 , wherein the wavelength conversion layer further comprises a first resin with the quantum dots dispersed therein. 
     
     
       8. The method of  claim 7 , wherein the wavelength conversion layer has a thickness of about 80 μm to about 100 μm. 
     
     
       9. The method of  claim 1 , wherein the bank comprises a mixture of fine particles and a second resin. 
     
     
       10. The method of  claim 9 , wherein the fine particles are formed of the same material as at least one of the first and second substrates. 
     
     
       11. The method of  claim 1 , further comprising forming a light blocking layer along edges of at least one of the first and second substrates. 
     
     
       12. The method of  claim 1 , further comprising forming a reflection preventing layer or a light transmission adjusting layer on at least one of the first substrate and second substrates. 
     
     
       13. The method of  claim 1 , wherein each of the first and second substrates has a substantially C-shape.