Semiconductor device comprising resistor comprising metal oxide

Abstract

An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film in contact with the metal oxide film, 
 wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region, 
 wherein the metal oxide film is a stack of an In-M-Zn oxide film and an In—N—Zn oxide film, M and N being each Al, Ti, Ga, Y, Zr, Sn, La, Ce, or Nd, 
 wherein the In-M-Zn oxide film is on and in direct contact with the In—N—Zn oxide film, and 
 wherein the proportion of M atoms in the In-M-Zn oxide film is higher than the proportion of N atoms in the In—N—Zn oxide film. 
 
     
     
       2. The semiconductor device according to  claim 1 ,
 wherein the metal oxide film comprises a plurality of crystal parts, 
 wherein c-axis alignment is found in the plurality of crystal parts, and 
 wherein c-axes in the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the metal oxide film. 
 
     
     
       3. The semiconductor device according to  claim 1 ,
 wherein the metal oxide film comprises a plurality of crystal parts, 
 wherein a-axes are not aligned in the plurality of crystal parts in the metal oxide film, and 
 wherein b-axes are not aligned in the plurality of crystal parts in the metal oxide film. 
 
     
     
       4. The semiconductor device according to  claim 1 , further comprising a transistor,
 wherein the transistor comprises:
 a gate electrode over the insulating surface; 
 an oxide semiconductor film at least partly overlapping with the gate electrode; 
 a gate insulating film between the gate electrode and the oxide semiconductor film; 
 a pair of electrodes in contact with the oxide semiconductor film; 
 an oxide insulating film at least partly overlapping with the pair of electrodes; and 
 the nitride insulating film in contact with the oxide insulating film. 
 
 
     
     
       5. The semiconductor device according to  claim 1 , wherein the nitride insulating film is formed of silicon nitride, a silicon nitride oxide, an aluminum nitride, or an aluminum nitride oxide. 
     
     
       6. A semiconductor device comprising:
 a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film over the metal oxide film, 
 wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region, 
 wherein the metal oxide film is a stack of an In-M-Zn oxide film and an In—N—Zn oxide film, M and N being each Al, Ti, Ga, Y, Zr, Sn, La, Ce, or Nd, 
 wherein the In-M-Zn oxide film is on and in direct contact with the In—N—Zn oxide film, and 
 wherein the proportion of M atoms in the In-M-Zn oxide film is higher than the proportion of N atoms in the In—N—Zn oxide film. 
 
     
     
       7. The semiconductor device according to  claim 6 ,
 wherein the metal oxide film comprises a plurality of crystal parts, 
 wherein c-axis alignment is found in the plurality of crystal parts, and 
 wherein c-axes in the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the metal oxide film. 
 
     
     
       8. The semiconductor device according to  claim 6 ,
 wherein the metal oxide film comprises a plurality of crystal parts, 
 wherein a-axes are not aligned in the plurality of crystal parts in the metal oxide film, and 
 wherein b-axes are not aligned in the plurality of crystal parts in the metal oxide film. 
 
     
     
       9. The semiconductor device according to  claim 6 , further comprising a transistor,
 wherein the transistor comprises:
 a gate electrode over the insulating surface; 
 an oxide semiconductor film at least partly overlapping with the gate electrode; 
 a gate insulating film between the gate electrode and the oxide semiconductor film; 
 a pair of electrodes in contact with the oxide semiconductor film; 
 an oxide insulating film at least partly overlapping with the pair of electrodes; and 
 the nitride insulating film in contact with the oxide insulating film. 
 
 
     
     
       10. The semiconductor device according to  claim 6 , wherein the nitride insulating film is formed of silicon nitride, a silicon nitride oxide, an aluminum nitride, or an aluminum nitride oxide.