Semiconductor device and portable apparatus using the same

Abstract

The present invention provides a semiconductor device that can achieve miniaturization or thinning of the size of the package while maintaining the characteristic of the MOSFET and reducing the on-resistance value, and a portable apparatus using the same. The gate electrodes 26 and 28 of the semiconductor chip 10 are disposed in the vicinity of the two side surfaces of the longitudinal direction (the x axis direction on the page) of the package 2, and the gate terminal 13 and 14 that is mounted with the gate electrodes 26 and 28 in a flip-chip manner are extended in the longitudinal direction of the package 2 and are derived to the outside from the two side surfaces 2A and 2B. Based on the configuration, it is capable of maximizing the size of the semiconductor chip with respect to the size of the package, and it is able to realize the high performance of the element characteristic for the module.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a frame; 
 a semiconductor chip having a main surface mounted on the frame in a flip-chip manner; 
 an integrated circuit (IC) chip stacked and fixed on a surface of the semiconductor chip opposite to the main surface; 
 metal wires electrically connected to the semiconductor chip and the IC chip; and 
 a package encapsulating the frame, the semiconductor chip, the IC chip, and the metal wires, 
 wherein the package has two side surfaces opposite to each other in the longitudinal direction of the package, 
 wherein the semiconductor chip is formed with a first transistor and a second transistor, a gate electrode and a source electrode of the first transistor formed on the main surface is arranged beside one of the side surfaces of the package, and a gate electrode and a source electrode of the second transistor formed on the main surface is arranged beside the other one of the side surfaces of the package, and 
 wherein gate terminals of the frame mounted with the gate electrodes are respectively extended to the two side surfaces of the package, and at least one of the source electrodes on the main surface is electrically connected to the IC chip on the semiconductor chip through at least one of the metal wires. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein one of the gate terminals of the frame where the gate electrode of the first transistor is mounted extends along the longitudinal direction and is exposed from the one of the side surfaces of the package, and the other one of the gate terminals of the frame where the gate electrode of the second transistor is mounted extends along the longitudinal direction and is exposed from the other one of the side surfaces of the package. 
     
     
       3. The semiconductor device according to  claim 2 , wherein the metal wire electrically connected to the gate electrode of the first transistor is connected to the gate terminal of the frame between the gate electrode of the first transistor and the one of the side surfaces of the package, and the metal wire electrically connected with the gate electrode of the second transistor is connected to the gate terminal of the frame between the gate electrode of the second transistor and the other one of the side surfaces of the package. 
     
     
       4. The semiconductor device according to  claim 3 , wherein the semiconductor chip has a common drain electrode of the first transistor and the second transistor formed on the surface opposite to the main surface, wherein a source terminal of the frame where the source electrode of the first transistor is mounted is exposed from the one of the side surfaces of the package, and wherein a source terminal of the frame where the source electrode of the second transistor is mounted is exposed from the other one of the side surfaces of the package. 
     
     
       5. The semiconductor device according to  claim 2 , wherein the semiconductor chip has a common drain electrode of the first transistor and the second transistor formed on the surface opposite to the main surface, wherein a source terminal of the frame where the source electrode of the first transistor is mounted is exposed from the one of the side surfaces of the package, and wherein a source terminal of the frame where the source electrode of the second transistor is mounted is exposed from the other one of the side surfaces of the package. 
     
     
       6. The semiconductor device according to  claim 1 , wherein the metal wire electrically connected to the gate electrode of the first transistor is connected to one of the gate terminals of the frame between the gate electrode of the first transistor and the one of the side surfaces of the package, and the metal wire electrically connected with the gate electrode of the second transistor is connected to the other one of the gate terminals of the frame between the gate electrode of the second transistor and the other one of the side surfaces of the package. 
     
     
       7. The semiconductor device according to  claim 6 , wherein the semiconductor chip has a common drain electrode of the first transistor and the second transistor formed on the surface opposite to the main surface, wherein a source terminal of the frame where the source electrode of the first transistor is mounted is exposed from the one of the side surfaces of the package, and wherein a source terminal of the frame where the source electrode of the second transistor is mounted is exposed from the other one of the side surfaces of the package. 
     
     
       8. The semiconductor device according to  claim 1 , wherein the semiconductor chip has a common drain electrode of the first transistor and the second transistor formed on the surface opposite to the main surface, wherein a source terminal of the frame where the source electrode of the first transistor is mounted is exposed from the one of the side surfaces of the package, and wherein a source terminal of the frame where the source electrode of the second transistor is mounted is exposed from the other one of the side surfaces of the package. 
     
     
       9. The semiconductor device according to  claim 1 , wherein a source electrode of the first transistor is arranged side by side with the gate electrode of the first transistor in the longitudinal direction of the semiconductor chip; a source electrode of the second transistor is arranged side by side with the gate electrode of the second transistor in the longitudinal direction of the semiconductor chip, wherein the gate electrode and the source electrode of the first transistor and the gate electrode and the source electrode of the second transistor are disposed rotationally symmetric with respect to a central point of the semiconductor chip. 
     
     
       10. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 1 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       11. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 2 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       12. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 3 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       13. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 4 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       14. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 5 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       15. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 6 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       16. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 7 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       17. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 8 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus. 
 
     
     
       18. A portable apparatus, comprising:
 a protection circuit board for a secondary battery; and 
 the semiconductor device according to  claim 9 , 
 wherein the package of the semiconductor device is mounted on the protection circuit board, wherein the longitudinal direction of the package is disposed along the longitudinal direction of the protection circuit board, and the transverse direction of the protection circuit board is disposed along the thickness direction of a housing of the portable apparatus.