Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method

Abstract

Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

The invention claimed is: 
     
       1. A treatment composition for chemical mechanical polishing, comprising:
 (A) a nitrogen-containing compound; 
 (B) at least one compound selected from the group consisting of a surfactant and polyacrylic acid; and 
 (D) a pH adjusting agent, 
 wherein in terms of electrode charge transfer resistance value by Ω/cm −2  obtained by AC impedance measurement using a metal, which is contained in a wiring layer of an object to be treated by the treatment composition, as an electrode by 
 bonding an insulating tape to a central 1 cm×1 cm portion of a metal wafer cut to 1 cm×3 cm, 
 attaching an electrode clip to an upper 1 cm×1 cm exposed area of the metal wafer, 
 connecting the metal wafer to a measurement apparatus with a controlled AC voltage, 
 immersing a lower 1 cm×1 cm exposed area of the metal wafer in an aqueous solution for 5 minutes, 
 applying an AC voltage having art amplitude of 5 mV and a frequency of from 1,500 Hz to 0.5 Hz changing from a higher frequency to a lower frequency to obtain values for a real part and an imaginary part of a resistance value, 
 plotting the imaginary part on a vertical axis and the real part on a horizontal axis, and 
 analyzing the resultant semicircular plot with AC impedance analysis software, 
 a value (RA+RB) obtained by summing up an electrode charge transfer resistance value (RA) in an aqueous solution containing the component (A) and the pH adjusting agent (D), and an electrode charge transfer resistance value (RB) in an aqueous solution containing the component (B) and the pH adjusting agent (D), a electrode charge transfer r value (RC) in an aqueous solution containing the component (A), the component (B), and the pH adjusting agent (D) satisfy a relationship of RC/(RA+RB)>1. 
 
     
     
       2. The treatment composition for chemical mechanical polishing according to claim in the nitrogen-containing compound (A) comprises at least one compound selected from the group consisting of a compound represented by formula (1), a compound represented by formula (2), end a compound represented by formula (3): 
       
         
           
           
               
               
           
         
         where R 1  and R 2  each independently represent a hydrogen atom or an organic group comprising 1 to 10 carbon atoms; 
       
       
         
           
           
               
               
           
         
         where R 3  represents a functional group selected from the group consisting of a hydrogen atom, an organic group comprising 2 to 10 carbon atoms and a nitrogen atom, and an organic group comprising 1 to 10 carbon atoms and a carboxyl group; and 
       
       
         
           
           
               
               
           
         
         where one or more of R 4  to R 7  each independently represent a carboxyl group comprising 1 to 3 carbon atoms, and others of R 4  to R 7  each represent a hydrogen atom. 
       
     
     
       3. The treatment composition for chemical mechanical polishing according to  claim 2 ,
 wherein the component (A) comprises the compound represented by the formula (1), and 
 wherein the component (B) comprises an anionic surfactant or a polyacrylic acid. 
 
     
     
       4. The treatment composition for chemical mechanical polishing according to  claim 3 , wherein the anionic surfactant comprises at least one selected from the group consisting of potassium dodecylbenzenesulfonate, a dipotassium alkenylsuccinate, and octyl phosphoric acid ester. 
     
     
       5. The treatment composition for chemical mechanical polishing according to  claim 2 ,
 wherein the component (A) comprises the compound represented by the formula (2) in which R 3  represents an organic group comprising 2 to 10 carbon atoms and a nitrogen atom, and 
 wherein the component (B) comprises a surfactant comprising a sulfo group. 
 
     
     
       6. The treatment composition for chemical mechanical polishing according to  claim 5 , wherein the surfactant comprising a sulfo group comprises an alkylbenzenesulfonic acid or a salt thereof. 
     
     
       7. The treatment composition for chemical mechanical polishing according to  claim 2 ,
 wherein the component (A) comprises the compound represented by the formula (2) or the compound represented by the formula (3), and 
 wherein the component (B) comprises a betaine-based surfactant comprising a carboxyl group. 
 
     
     
       8. The treatment composition for chemical mechanical polishing according to  claim 7 , wherein the betaine-based surfactant comprising a carboxyl group comprises at least one selected from the group consisting of a compound represented by formula (4), a compound represented by formula (5), and a compound represented by formula (6): 
       
         
           
           
               
               
           
         
         where R 8  to R 10  each independently represent a hydrocarbon group each comprising 1 to 15 carbon atoms, and R 11  represents a hydrocarbon group comprising 1 to 5 carbon atoms; 
       
       
         
           
           
               
               
           
         
         where R 12  and R 13  each independently represent a hydrogen atom, a hydrocarbon group comprising 5 to 20 atoms, an organic group comprising 5 to 20 carbon atoms and an amide group, an organic group comprising 5 to 20 carbon atoms and an amino group, an organic group comprising 5 to 20 carbon atoms and an imide group, an organic group comprising 1 to 10 carbon atoms and a carboxyl group, or an organic group comprising 1 is 10 carbon atoms and a hydroxyl group, and R 14  represents a hydrocarbon group comprising 1 to 5 carbon atoms; and 
       
       
         
           
           
               
               
           
         
         where R 15  and R 16  each independently represent a hydrocarbon group comprising 1 to 20 carbon atoms, or an organic group comprising 1 to 10 carbon atoms and a hydroxyl group, and R 17  represents a hydrocarbon group comprising 1 to 5 carbon atoms. 
       
     
     
       9. The treatment composition for chemical mechanical polishing according to  claim 8 ,
 wherein the component (A) comprises at least one selected from the group consisting of quinolinic acid, histidine, arginine, and aspartic acid, and 
 wherein the component (B) comprises at least one selected from the group consisting of lauryldimethylaminoacetic acid betaine, laurylaminodipropionic acid betaine, and 2-lauryl-N-carboxymethyl-N-hydroxyethylimidazolinium betaine. 
 
     
     
       10. The treatment composition for chemical mechanical polishing according to  claim 1 , wherein the electrode charge transfer resistance value (RC) is more than 100 kΩ/cm 2 . 
     
     
       11. The treatment composition for chemical mechanical polishing according to  claim 1 , wherein the metal is tungsten. 
     
     
       12. The treatment composition for chemical mechanical polishing according to  claim 1 , further comprising an oxidizing agent (C). 
     
     
       13. The treatment composition for chemical mechanical polishing according to  claim 12 , wherein the oxidizing agent (C) is hydrogen peroxide or ammonium persulfate. 
     
     
       14. The treatment composition for chemical mechanical polishing according to  claim 1 , wherein the treatment composition for chemical mechanical polishing is a cleaning composition for cleaning the object to be treated. 
     
     
       15. A cleaning method, comprising
 cleaning an object with the treatment composition for chemical mechanical polishing of  claim 14 . 
 
     
     
       16. The treatment composition for chemical mechanical polishing according to  claim 1 , further comprising abrasive grains (E). 
     
     
       17. The treatment composition for chemical mechanical polishing according to  claim 16 , wherein the treatment composition for chemical mechanical polishing is a chemical mechanical polishing composition for polishing the object to be treated. 
     
     
       18. A chemical mechanical polishing method, comprising
 polishing an object with the treatment composition for chemical mechanical polishing of  claim 17 .