Temperature sensor, method for manufacturing temperature sensor, and display device to which temperature sensor is applied

Abstract

There are disclosed a temperature sensor and a method for manufacturing the same. The temperature sensor comprises; a sensor unit including an organic light emitting layer including a delayed fluorescent material; a temperature transfer unit located below the sensor unit to transfer an external temperature to the sensor unit; a first electrode located on the sensor unit; a second electrode located below the sensor unit to be spaced apart from the temperature transfer unit; and a light intensity measuring unit located below the second electrode and measuring the intensity of light emitted from the organic light emitting layer. The temperature sensor can measure a temperature by using a change in the intensity of light using delayed fluorescence, thereby providing improved sensitivity.

The invention claimed is: 
     
       1. A temperature sensor, comprising:
 a sensor including an organic light emitting layer having a delayed fluorescent material; 
 a temperature transfer member located below the sensor to transfer a temperature to the sensor; 
 a first electrode located on the sensor; 
 a second electrode located below the sensor and spaced apart from the temperature transfer member; 
 a photodetector located below the second electrode to measure intensity of light emitted from the organic light emitting layer; and 
 a temperature blocker located between the temperature transfer member and the second electrode to intercept a temperature transfer to the second electrode from the temperature transfer member, 
 wherein the temperature blocker is located between the photodetector and the temperature transfer member, and the organic light emitting layer in the sensor overlaps with upper surfaces of the photodetector, the temperature blocker and the temperature transfer member. 
 
     
     
       2. The temperature sensor of  claim 1 , wherein the intensity of light emitted from the organic light emitting layer is changed according to a temperature. 
     
     
       3. The temperature sensor of  claim 1 , wherein the organic light emitting layer includes a host material and a dopant material, and the delayed fluorescent material is the dopant material. 
     
     
       4. The temperature sensor of  claim 3 , wherein the host material of the organic light emitting layer is an organic light emitting material other than the delayed fluorescent material. 
     
     
       5. The temperature sensor of  claim 1 , wherein the organic light emitting layer includes a host material and a dopant material, and the delayed fluorescent material is the host material. 
     
     
       6. The temperature sensor of  claim 5 , wherein the dopant material of the organic light emitting layer is an organic light emitting material other than the delayed fluorescent material. 
     
     
       7. The temperature sensor of  claim 1 , wherein the photodetector determines a temperature according to a change in the intensity of light emitted from the light emitting layer. 
     
     
       8. The temperature sensor of  claim 1 , wherein the first electrode and the second electrode have a multilayered structure having CuAlO 2 /Ag/CuAlO 2 , ITO/Ag/ITO, ZnO/Ag/ZnO, ZnS/Ag/ZnS, TiO 2 /Ag/TiO 2 , ITO/Au/ITO, WO 3 /Ag/WO 3 , or MoO 3 /Ag/MoO 3 . 
     
     
       9. An organic light emitting display, comprising:
 a plurality of pixels including organic light emitting diodes and driving circuits for operating the organic light emitting diodes; and 
 the temperature sensor of  claim 1 , located in at least one of an active area in which the pixels are disposed and an inactive area around the active area. 
 
     
     
       10. The organic light emitting display of  claim 9 , wherein the temperature sensor is located in the active area, and the temperature sensor operates an element for displaying an image and an element for detecting an ambient temperature. 
     
     
       11. The organic light emitting display of  claim 10 , wherein the first electrode or the second electrode of the temperature sensor is connected with a driving transistor included in the corresponding driving circuit. 
     
     
       12. The organic light emitting display of  claim 11 , further comprising:
 a controller configured to compensate for changes in characteristics of the organic light emitting diode or the driving circuit based on the temperature detected by the temperature sensor. 
 
     
     
       13. The organic light emitting display of  claim 12 , wherein a plurality of the temperature sensors are located at a plurality of points in the active area, and the controller compensates for changes in characteristics of the organic light emitting diode or the driving circuit individually for each zone set corresponding to the temperature sensors. 
     
     
       14. The organic light emitting display of  claim 12 , wherein the characteristics of the organic light emitting diode or the driving circuit include at least one of a threshold voltage of the organic light emitting diode, mobility of the transistor, and a threshold voltage of the transistor. 
     
     
       15. The organic light emitting display of  claim 9 , further comprising:
 a controller configured to adjust a luminance of the image displayed by at least one of the pixels based on a temperature detected by the temperature sensor. 
 
     
     
       16. The organic light emitting display of  claim 9 , further comprising:
 a controller configured to compensate for a deterioration value according to a temperature of one of the organic light emitting diodes or driving circuits based on a temperature detected by the temperature sensor. 
 
     
     
       17. A method for manufacturing a temperature sensor, the method comprising:
 forming a sensor including an organic light emitting layer having a delayed fluorescent material on a first electrode; 
 forming a temperature transfer member for transferring an external temperature to the sensor in a partial area on the sensor; 
 forming a temperature blocker on the sensor to be adjacent to a side of the temperature transfer member; 
 forming a second electrode on the sensor to be adjacent to a side of the temperature blocker, the second electrode being spaced apart from the temperature transfer member; and 
 forming a photodetector on the second electrode to measure intensity of light emitted from the organic light emitting layer, 
 wherein the temperature blocker intercepts a temperature transfer to the second electrode from the temperature transfer member, and 
 wherein the temperature blocker is located between the photodetector and the temperature transfer member, and the organic light emitting layer in the sensor overlaps with upper surfaces of the photodetector, the temperature blocker and the temperature transfer member. 
 
     
     
       18. The method of  claim 17 , wherein the intensity of light emitted from the organic light emitting layer is changed according to a temperature. 
     
     
       19. The method of  claim 17 , wherein the delayed fluorescent material includes at least one selected from the group consisting of SnF 2 -Copro III, SnF 2 -Meso IX, SnF 2 -Hemato IX, SnF 2 -Proto IX, SnF 2 -OEP, SnF 2 -Etiol, 2CzPN, 4CzIPN, 4CzPN, 4CzTPN, 4CzTPN-Me, 4CzTPN-Ph, PXZ-OXD, 2PXZ-OXD, PXZ-TAZ and 2PXZ-TAZ.