P
US10566356B2ActiveUtilityPatentIndex 84

Display device, semiconductor device, and method of manufacturing display device

Assignee: SONY CORPPriority: Jun 15, 2012Filed: Jun 21, 2018Granted: Feb 18, 2020
Est. expiryJun 15, 2032(~5.9 yrs left)· nominal 20-yr term from priority
Inventors:TSUNO HITOSHINAGASAWA KOICHI
H05B 33/10G02F 1/136213G02F 1/136227H05B 33/22H01L 27/326H01L 27/1255H01L 27/1262H01L 27/3265H01L 2227/323H01L 27/3258H01L 27/3262H01L 27/1248H01L 27/3276H01L 27/124H01L 27/3279H10D 30/6704H10D 86/481H10D 86/451H10D 86/441H10D 86/0212H10D 86/60H10K 59/123H10K 59/1216H10K 59/1213H10K 59/1201H10K 59/121H10K 59/1315H10K 59/124H10K 59/131
84
PatentIndex Score
7
Cited by
20
References
32
Claims

Abstract

A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer (140), and a gate electrode layer (120), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section (200) that includes a first metal film (210) and a second metal film (220), the first metal film being disposed at a same level as wiring layers (161, 162) that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film (152) in between; and a display element that is configured to be controlled by the transistor section.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. A display device comprising, in this order:
 a substrate; 
 a semiconductor film; 
 a first insulating film; 
 a first metal film; 
 a second insulating film; 
 a second metal film; 
 a third insulating film; and 
 a third metal film; 
 wherein a pixel circuit region includes: 
 a first section corresponding to an overlap portion of a first portion of the semiconductor film, a first portion of the first insulating film and a first portion of the first metal film; 
 a second section corresponding to an overlap portion of a first portion of the second metal film, a first portion of the third insulating film and a first portion of the third metal film; 
 a third section corresponding to a second portion of the semiconductor film, and the second portion of the semiconductor film overlapping with the second section in a cross sectional view; 
 a fourth section including a first wiring, wherein the first wiring includes a second portion of the second metal film, and the first wiring is electrically connected to the first section; and 
 a fifth section including a second wiring, wherein the second wiring includes a second portion of the third metal film, 
 wherein the first section is a transistor, 
 wherein the second section is a capacitor, 
 wherein a first vertical distance from a top surface of the first portion of the second metal film to a bottom surface of the first portion of the third metal film is smaller than a second vertical distance from a top surface of the first portion of the second metal film to a bottom surface of the second portion of the third metal film overlapping with the third insulating film in the cross sectional view, 
 wherein the third insulating film has a layered structure including a high dielectric constant material, and 
 wherein the transistor is configured to control a light emitting element. 
 
     
     
       2. The display device according to  claim 1 , wherein the first portion of the semiconductor film and the second portion of the semiconductor film are separately formed. 
     
     
       3. The display device according to  claim 1 , wherein the first portion of the third metal film and the second portion of the third metal film are separately formed. 
     
     
       4. The display device according to  claim 1 , wherein the third insulating film includes at least one recessed portion in a cross-sectional view. 
     
     
       5. The display device according to  claim 1 , wherein the pixel circuit region further includes
 the second wiring overlapping with the first portion of the first metal film in the plan view. 
 
     
     
       6. The display device according to  claim 1 , wherein a fourth insulating film is disposed on the third metal film and a fourth electrode film is disposed on the fourth insulating film. 
     
     
       7. The display device according to  claim 6 , wherein the light emitting element includes the fourth electrode film and an organic light emission layer, and wherein a second portion of the third metal film is connected to the fourth electrode film. 
     
     
       8. The display device according to  claim 6 , wherein the fourth electrode film includes a pixel electrode. 
     
     
       9. The display device according to  claim 1 , wherein a size of the first portion of the third metal film is larger than a size of the first portion of the second metal film in the plan view. 
     
     
       10. The display device according to  claim 1 , wherein the first insulating film includes at least one selected from the group consisting of silicon oxide, silicon nitride, polyimide, and an acrylic resin. 
     
     
       11. The display device according to  claim 1 , wherein a thickness of the first portion of the third insulating film is from 50 nm to 500 nm. 
     
     
       12. The display device according to  claim 1 , wherein a thickness of the first portion of the second metal film is from 100 nm to 1500 nm, and wherein a thickness of the first portion of the third metal film is from 100 nm to 1500 nm. 
     
     
       13. The display device according to  claim 1 , wherein the transistor is a driving transistor. 
     
     
       14. The display device according to  claim 1 , wherein the first wiring is electrically connected to the transistor via a first contact hole provided in the second insulating film. 
     
     
       15. The display device according to  claim 1 , wherein the first metal film and the second metal film include a same material. 
     
     
       16. The display device according to  claim 1 , wherein the semiconductor layer includes an oxide semiconductor. 
     
     
       17. A display device comprising, in this order:
 a substrate; 
 a semiconductor film; 
 a first insulating film; 
 a first metal film; 
 a second insulating film; 
 a second metal film; 
 a third insulating film; 
 a fourth insulating film; and 
 a third metal film, 
 wherein a pixel circuit region includes: 
 a first section corresponding to an overlap portion of a first portion of the semiconductor film, a first portion of the first insulating film and a first portion of the first metal film; 
 a second section corresponding to an overlap portion of a first portion of the second metal film, a first portion of the third insulating film and a first portion of the third metal film; 
 a third section corresponding to a second portion of the semiconductor film; and 
 a fourth section corresponding to an overlap portion of a second portion of the second metal film, a second portion of the third insulating film and a first portion of the fourth insulating film, wherein the second portion of the second metal film is a first wiring and the first wiring is electrically connected to the first section, 
 a fifth section including a second wiring, wherein the second wiring includes a second portion of the third metal film, 
 wherein the first section is a transistor, 
 wherein the second section is a first capacitor, 
 wherein a first vertical distance from a top surface of the first portion of the second metal film to a bottom surface of the first portion of the third metal film is smaller than a second vertical distance from a top surface of the first portion of the second metal film to a bottom surface of the second portion of the third metal film overlapping with the fourth section, 
 wherein the transistor is configured to control a light emitting element, 
 wherein the first portion of the third metal film is directly in contact with the first portion of the third insulating film in the second section, and 
 wherein the third insulating film includes an inorganic material and the fourth insulating film includes an organic material. 
 
     
     
       18. The display device according to  claim 17 , wherein the first portion of the semiconductor film and the second portion of the semiconductor film are separately formed. 
     
     
       19. The display device according to  claim 17 , wherein the first portion of the third metal film and the second portion of the third metal film are separately formed. 
     
     
       20. The display device according to  claim 17 , wherein the fourth insulating film includes at least one recessed portion in a cross-sectional view. 
     
     
       21. The display device according to  claim 17 ,
 wherein the second wiring overlaps with the first portion of the first metal film in the plan view. 
 
     
     
       22. The display device according to  claim 17 , wherein a fifth insulating film is disposed on the third metal film and a fourth electrode film is disposed on the fifth insulating film. 
     
     
       23. The display device according to  claim 22 , wherein the light emitting element includes the fourth electrode film and an organic light emission layer, and wherein a second portion of the third metal film is connected to the fourth electrode film. 
     
     
       24. The display device according to  claim 22 , wherein the fourth electrode film includes a pixel electrode. 
     
     
       25. The display device according to  claim 17 , wherein a size of the first portion of the third metal film is larger than a size of the first portion of the second metal film in the plan view. 
     
     
       26. The display device according to  claim 17 , wherein the first insulating film includes at least one selected from the group consisting of silicon oxide, silicon nitride, polyimide, and an acrylic resin. 
     
     
       27. The display device according to  claim 17 , wherein a thickness of the first portion of the third insulating film is from 50 nm to 500 nm. 
     
     
       28. The display device according to  claim 17 , wherein a thickness of the first portion of the second metal film is from 100 nm to 1500 nm, and wherein a thickness of the first portion of the third metal film is from 100 nm to 1500 nm. 
     
     
       29. The display device according to  claim 17 , wherein the transistor is a driving transistor. 
     
     
       30. The display device according to  claim 17 , wherein the first wiring is electrically connected to the transistor via a first contact hole provided in the second insulating film. 
     
     
       31. The display device according to  claim 17 , wherein the first metal film and the second metal film include a same material. 
     
     
       32. The display device according to  claim 17 , wherein the semiconductor layer includes an oxide semiconductor.

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