US10580911B2ActiveUtilityA1

Photovoltaic element

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Assignee: SHARP KKPriority: Aug 21, 2015Filed: Aug 21, 2015Granted: Mar 3, 2020
Est. expiryAug 21, 2035(~9.1 yrs left)· nominal 20-yr term from priority
H01L 31/075H01L 31/072H01L 31/022441H10F 77/244H10F 10/166H10F 10/17H10F 10/16H10F 77/219Y02E10/548Y02E10/547Y02E10/50
36
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Cited by
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References
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Claims

Abstract

A photovoltaic element includes: a semiconductor substrate; a first i-type semiconductor film provided on a part of one of surfaces of the semiconductor substrate; a first semiconductor region including a first-conductivity-type semiconductor film provided on the first i-type semiconductor film; a first electrode layer provided on the first semiconductor region; a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. A photovoltaic element comprising:
 a semiconductor substrate; 
 a first i-type semiconductor film on a part of a surface of the semiconductor substrate; 
 a first semiconductor region comprising a first-conductivity-type semiconductor film on the first i-type semiconductor film; 
 a first electrode layer on the first semiconductor region; 
 a second i-type semiconductor film on another part of the surface of the semiconductor substrate; 
 a second semiconductor region comprising a second-conductivity-type semiconductor film on the second i-type semiconductor film; 
 a second electrode layer on the second semiconductor region; and 
 a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer, the first conductive film comprising mutually isolated conductive films wherein the first electrode layer is in direct contact with the first semiconductor region, forming a contact area that is greater than a contact area where the first conductive film is in direct contact with the first semiconductor region. 
 
     
     
       2. The photovoltaic element according to  claim 1 , wherein the first conductive film has a thickness that is smaller than or equal to half that of the first electrode layer. 
     
     
       3. The photovoltaic element according to  claim 1 , wherein the first conductive film is covered with the first electrode layer. 
     
     
       4. The photovoltaic element according to  claim 1 , wherein the first conductive film comprises a metal oxide film. 
     
     
       5. The photovoltaic element according to  claim 1 , wherein the first conductive film has a lower sheet resistance than does the first semiconductor region. 
     
     
       6. The photovoltaic element according to  claim 1 , further comprising a second conductive film interposed at least at a site between the second semiconductor region and the second electrode layer.

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