Interconnect structures with fully aligned vias

Abstract

A structure having fully aligned via connecting metal lines on different Mx levels. The structure may include a first metal line and a second metal line in a first ILD, a cap covering the first ILD, the second metal line and a portion of the first metal line, a second ILD on the cap, and a via that electrically connects the first metal line to a third metal line, wherein the third metal line is above the first metal line and runs perpendicular to the first metal line, the via is fully aligned to the first metal line and the third metal line, and the via electrically connects the first metal line to the third metal line.

What is claimed is: 
     
       1. A structure comprising:
 a cap layer covering a portion of a first metal line in a first ILD; 
 a second ILD on the cap layer, wherein an upper surface of at least a portion of the cap layer is substantially flush with an upper surface of the second ILD; 
 a second metal line above and perpendicular to the first metal line; and 
 a via electrically connecting the first metal line to the second metal line, wherein the via is fully aligned to both the first metal line and the second metal line, wherein sidewalls of both the via and the second metal line are in direct contact with a sidewall of the cap layer. 
 
     
     
       2. The structure of  claim 1 , further comprising:
 a trench stop hardmask between the cap layer and the first ILD, wherein the upper surface of the portion of the cap layer is substantially flush with an upper surface of the trench stop hardmask, and the cap layer is in direct contact with the upper surface of the trench stop hardmask and sidewalls of the trench stop hardmask. 
 
     
     
       3. The structure of  claim 2 , wherein the trench stop hardmask is a low-k silicon carbide. 
     
     
       4. The structure of  claim 1 , further comprising:
 a metal trench hardmask above the second ILD, wherein the metal trench hardmask has a trench hardmask pattern that coincides with vertical edges of the second metal line. 
 
     
     
       5. The structure of  claim 1 , wherein the upper surface of the second ILD is in direct contact with a bottom surface of the second metal line. 
     
     
       6. A structure comprising:
 a trench stop hardmask above and in direct contact with a first ILD; 
 a cap layer covering the a portion of a first metal line in the first ILD, wherein the cap layer is in direct contact with a top surface of the first metal line and sidewalls of the first ILD, and wherein an uppermost surface of a portion of the cap layer is substantially flush with an uppermost surface of the trench stop hardmask such that the cap layer is entirely below the uppermost surface of the trench stop hardmask; 
 a second ILD on the cap layer; and 
 a via extending vertically from the top surface of the first metal line to a bottom surface of a second metal line, wherein the second metal line is above and perpendicular to the first metal line, the via is fully aligned to the first metal line and the second metal line. 
 
     
     
       7. The structure of  claim 6 , wherein the trench stop hardmask is a low-k silicon carbide. 
     
     
       8. The structure of  claim 6 , further comprising:
 a metal trench hardmask above the second ILD, wherein the metal trench hardmask has a trench hardmask pattern that coincides with vertical edges of the second metal line. 
 
     
     
       9. The structure of  claim 6 , wherein an upper surface of the second ILD is in direct contact with the bottom surface of the second metal line. 
     
     
       10. The structure of  claim 6 , wherein sidewalls of the via and sidewalls of the second metal line are in direct contact with a sidewall of the cap layer. 
     
     
       11. The structure of  claim 6 , wherein the cap layer is in direct contact with the uppermost surface of the trench stop hardmask and sidewalls of the trench stop hardmask.