OLED panel with a thin passivation layer below light emitting structure

Abstract

The present disclosure relates to an OLED panel and a manufacturing method thereof. The OLED panel includes: a glass substrate; a TFT light shielding layer; a buffer layer, a semiconductor layer; a patterned gate insulating layer; a patterned first metal layer; a interlayer insulating layer; a patterned second metal layer; a passivation layer deposited on the second metal layer by atomic layer deposition; a color filter; a planarization layer, wherein the planarization layer is provided with an opening structure corresponding to a storage capacitor area; an anode; a pixel defining layer; a light emitting layer; and a cathode. The present disclosure further provides a manufacturing method of an OLED panel thereof. The OLED panel and the manufacturing method thereof of the present disclosure can effectively increase the storage capacitance of the OLED panel, reduce the design area of the storage capacitor, and improve the panel aperture ratio.

What is claimed is: 
     
       1. An OLED panel, comprising: a glass substrate; a TFT light shielding layer formed on the glass substrate; a buffer layer deposited on the TFT light shielding layer; a semiconductor layer deposited on the buffer layer; a TFT active layer formed by patterning the semiconductor; a patterned gate insulating layer and a patterned first metal layer deposited on the semiconductor; an interlayer insulating layer deposited on the first metal layer; an opening of a source-drain contact area arranged on the interlayer insulating layer; a patterned second metal layer deposited on the interlayer insulating layer; a passivation layer deposited on the second metal layer by atomic layer deposition; a color filter, a planarization layer, an anode and a pixel defining layer formed on the passivation layer; an opening structure arranged on the planarization layer corresponding to a storage capacitor area, an area of the planarization layer is less than an area of the anode; a light emitting layer formed on the anode; and a cathode formed on the light emitting layer; wherein the semiconductor layer other than an area of the first metal layer covered is treated by a conducting process, and the passivation layer is a film of a high dielectric constant material and is provided with a via hole. 
     
     
       2. The OLED panel according to  claim 1 , wherein a thickness of the passivation layer is less than 500 Å. 
     
     
       3. The OLED panel according to  claim 1 , wherein the high dielectric constant material is Al 2 O 3 . 
     
     
       4. A manufacturing method of an OLED panel, comprising:
 Step 1, providing a glass substrate, depositing a layer of metal on the glass substrate and patterning the layer of metal as a TFT light shielding layer; 
 Step 2, sequentially depositing a buffer layer and a semiconductor layer, and patterning the semiconductor layer as a TFT active layer; 
 Step 3, sequentially depositing a gate insulating layer and a first metal layer, patterning the gate insulating layer and the first metal layer, and conducting a conductor process on the semiconductor layer other than an area of the first metal layer covered; 
 Step 4, depositing an interlayer insulating layer, and forming an opening of a source-drain contact area on the interlayer insulating layer; 
 Step 5, depositing a second metal layer, and patterning the second metal layer; 
 Step 6, depositing a film of a high dielectric constant material as a passivation layer by atomic layer deposition, and etching a via hole; 
 Step 7, sequentially forming a color filter, a planarization layer, an anode and a pixel defining layer, wherein the planarization layer has a via hole corresponding to the passivation layer and is an opening structure at the storage capacitor area, an area of the planarization layer is less than an area of the anode; and 
 Step 8, forming a light emitting layer and a cathode. 
 
     
     
       5. The manufacturing method of an OLED panel according to  claim 4 , wherein a thickness of the passivation layer is less than 500 Å. 
     
     
       6. The manufacturing method of an OLED panel according to  claim 4 , wherein the high dielectric constant material is Al 2 O 3 . 
     
     
       7. The manufacturing method of an OLED panel according to  claim 4 , wherein the material of the TFT light shielding layer is Mo, Al, Cu, Ti or alloy. 
     
     
       8. The manufacturing method of an OLED panel according to  claim 4 , wherein the buffer layer is a SiOx film, a SiNx film or a laminated structure film. 
     
     
       9. The manufacturing method of an OLED panel according to  claim 4 , wherein the material of the semiconductor layer is amorphous oxide semiconductor. 
     
     
       10. The manufacturing method of an OLED panel according to  claim 9 , wherein the material of the semiconductor is IGZO, IZTO or IGZTO. 
     
     
       11. An OLED panel, comprising: a glass substrate; a TFT light shielding layer formed on the glass substrate; a buffer layer deposited on the TFT light shielding layer; a semiconductor layer deposited on the buffer layer; a TFT active layer formed by patterning the semiconductor; a patterned gate insulating layer and a patterned first metal layer deposited on the semiconductor; an interlayer insulating layer deposited on the first metal layer; an opening of a source-drain contact area arranged on the interlayer insulating layer; a patterned second metal layer deposited on the interlayer insulating layer; a passivation layer deposited on the second metal layer by atomic layer deposition; a color filter, a planarization layer, an anode and a pixel defining layer formed on the passivation layer; an opening structure arranged on the planarization layer corresponding to a storage capacitor area, an area of the planarization layer is less than an area of the anode; a light emitting layer formed on the anode; and a cathode formed on the light emitting layer; wherein the semiconductor layer other than an area of the first metal layer covered is treated by a conducting process, the passivation layer is a film of a high dielectric constant material and is provided with a via hole, a thickness of the passivation layer is less than 500 Å, and the high dielectric constant material is Al 2 O 3 .