Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode

Abstract

A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

What is claimed is: 
     
       1. An imaging device comprising:
 an imaging substrate including a first semiconductor substrate with a photoelectric conversion region and a floating diffusion therein, a first insulating layer on a first side of the first semiconductor substrate, and a transfer transistor, the transfer transistor selectively connecting the photoelectric conversion region and the floating diffusion; 
 a first element layer with (a) a first semiconductor layer including a first active region, (b) a first semiconductor element that is comprised of the first active region, (c) one or more first connection regions each of which is an island-shaped metalized part of the first semiconductor layer isolated from the first active region, (d) a first laminated insulation film covering one main surface side of the first semiconductor layer, (e) one or more first electrodes embedded in the first insulation film each with a portion exposed to outside of the first laminated insulation film, and (f) one or more first contacts penetrating through the first laminated insulation film and connecting the semiconductor element or the one or more first connection regions to the one or more first electrodes, the one or more first electrodes facing the imaging substrate; 
 a second element layer with (a) a second semiconductor layer including a second active region, (b) a second semiconductor element that is comprised of the second active region, (c) one or more second connection regions each of which is an island-shaped metalized part of the second semiconductor layer isolated from the second active region, (d) a second laminated insulation film over one main surface side of the second semiconductor layer, (e) one or more second electrodes embedded in the second laminated insulation film each with a portion exposed to outside of the second laminated insulation film, (f) one or more second contacts penetrating through the second laminated insulation film and connecting the second semiconductor element or the second connection regions to the one or more second electrodes, the one or more second electrodes facing the imaging substrate; and 
 an intermediate layer between the first element layer and the second element layer, the intermediate layer comprising (a) a third laminated insulation film, (b) one or more third electrodes embedded in the third laminated insulation film each with a portion exposed to outside of the third laminated insulation film, and (c) third contacts penetrating through the third laminated insulation film and connecting the one or more third electrodes to the one or more first connection regions, 
 wherein, the one or more second electrodes and the one or more third electrodes are bonded to each other. 
 
     
     
       2. The imaging device of  claim 1 , wherein the first semiconductor element is a transistor. 
     
     
       3. The imaging device of  claim 1 , wherein each of the first semiconductor element and the second semiconductor element is a transistor. 
     
     
       4. The imaging device of  claim 1 , wherein the one or more first contacts connect the one or more first electrodes to the one or more first connection regions. 
     
     
       5. The imaging device of  claim 1 , wherein the one or more first contacts connect the one or more first electrodes to the first semiconductor element. 
     
     
       6. The imaging device of  claim 1 , wherein the first semiconductor layer and the second semiconductor layer are comprised of different semiconductor materials. 
     
     
       7. The imaging device of  claim 1 , wherein the first semiconductor layer comprises, the second semiconductor layer comprises, or both comprise silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), carbon (C), carbon nanotube, graphene, gallium arsenide (GaAs), or indium gallium arsenide (InGaAs).