Gate voltage control circuit of insulated gate bipolar transistor and control method thereof

Abstract

The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

What is claimed is: 
     
       1. A gate voltage control circuit of an IGBT, comprising:
 an active clamping circuit comprising a first terminal and a second terminal, the first terminal being connected with a collector of the IGBT for receiving a collector-emitter voltage of the IGBT, the second terminal being connected with a gate of the IGBT; 
 a power amplifier circuit comprising a first terminal and a second terminal, the first terminal of the power amplifier circuit receiving a drive signal; and 
 a voltage control circuit comprising a first terminal and a second terminal, the first terminal of the voltage control circuit being connected with the second terminal of the power amplifier circuit, the second terminal of the voltage control circuit being coupled to the gate of the IGBT for outputting a gate voltage; 
 wherein when the collector-emitter voltage is greater than or equal to a clamping voltage, the second terminal of the active clamping circuit injects charges into the gate of the IGBT and the voltage control circuit, and the gate voltage outputted by the voltage control circuit is greater than a gate threshold voltage and less than a preset voltage, the preset voltage being greater than the gate threshold voltage and less than a gate voltage value of the IGBT which is normally turned on. 
 
     
     
       2. The gate voltage control circuit of the IGBT according to  claim 1 , wherein the voltage control circuit comprises:
 a first transistor, first to third resistors, first to second diodes, and a first Zener diode, 
 wherein, a first terminal of the first resistor, an anode of the second diode and a first terminal of the third resistor are electrically connected with the first terminal of the voltage control circuit; 
 a second terminal of the first resistor and a base of the first transistor are electrically connected with a first terminal of the second resistor; 
 a collector of the first transistor is electrically connected with the ground; 
 an emitter of the first transistor and a second terminal of the second resistor are electrically connected with a cathode of the first diode; 
 an anode of the first diode is electrically connected with an anode of the first Zener diode; 
 a cathode of the first Zener diode, a cathode of the second diode, and a second terminal of the third resistor are electrically connected with the second terminal of the voltage control circuit. 
 
     
     
       3. The gate voltage control circuit of the IGBT according to  claim 1 , wherein the voltage control circuit comprises:
 a sixth resistor, a fourth diode, and a fourth Zener diode, 
 wherein, a first terminal of the sixth resistor, an anode of the fourth diode and an anode of the fourth Zener diode are electrically connected with the first terminal of the voltage control circuit; 
 a second terminal of the sixth resistor, a cathode of the fourth diode and a cathode of the fourth Zener diode are electrically connected with the second terminal of the voltage control circuit. 
 
     
     
       4. The gate voltage control circuit of the IGBT according to  claim 1 , wherein the active clamping circuit comprises: a third diode, fourth to fifth resistors, first to second capacitors, and second to third Zener diodes, wherein,
 a second terminal of the fourth resistor is connected with the second terminal of the active clamping circuit; 
 a cathode of the third diode is electrically connected with a first terminal of the fourth resistor; 
 a first terminal of the first capacitor and a first terminal of the fifth resistor are electrically connected with an anode of the third diode; 
 a second terminal of the first capacitor, a second terminal of the fifth resistor and an anode of the second Zener diode are electrically connected with a first terminal of the second capacitor; 
 a cathode of the second Zener diode and a second terminal of the second capacitor are electrically connected with an anode of the third Zener diode; 
 a cathode of the third Zener diode is connected with the first terminal of the active clamping circuit. 
 
     
     
       5. The gate voltage control circuit of the IGBT according to  claim 1 , wherein when the IGBT is turned off and the collector-emitter voltage is less than a clamping voltage, the second terminal of the active clamping circuit injects charges into the gate of the IGBT and the voltage control circuit, and the gate voltage outputted by the voltage control circuit is less than a gate threshold voltage. 
     
     
       6. The gate voltage control circuit of the IGBT according to  claim 1 , further comprising a gate driving resistor, the voltage control circuit being connected with the gate of the IGBT through the gate driving resistor. 
     
     
       7. A gate voltage control method of an IGBT, comprising:
 receiving a collector-emitter voltage of the IGBT by an active clamping circuit; 
 receiving and amplifying a drive signal by a power amplifier circuit; and 
 receiving the amplified drive signal and outputting a gate voltage by a voltage control circuit; 
 wherein when the collector-emitter voltage is greater than or equal to a clamping voltage, the active clamping circuit injects charges into a gate of the IGBT and the voltage control circuit, and the gate voltage outputted by the voltage control circuit is greater than a gate threshold voltage and less than a preset voltage, the preset voltage being greater than the gate threshold voltage and less than a gate voltage value of the IGBT which is normally turned on. 
 
     
     
       8. The gate voltage control method of the IGBT according to  claim 7 , wherein when the IGBT is turned off and the collector-emitter voltage is less than a clamping voltage, the active clamping circuit injects charges into a gate of the IGBT and the voltage control circuit, and the gate voltage outputted by the voltage control circuit is less than a gate threshold voltage.