Planar heating device and method of manufacturing the same

Abstract

A planar heating device includes a substrate, first and second electrodes disposed on both ends of the substrate, a heating layer disposed on the substrate and configured to contact the first and second electrodes, a first additional heating layer disposed on one end of the heating layer, and a second additional heating layer disposed on the other end of the heating layer.

What is claimed is: 
     
       1. A planar heating device comprising:
 a substrate; 
 a first electrode disposed on an end portion of the substrate; 
 a second electrode disposed on an opposing end portion of the substrate; 
 a heating layer disposed on the substrate and in contact with the first and second electrodes; 
 a first additional heating layer disposed on an end portion of the heating layer; and 
 a second additional heating layer disposed on an opposing end portion of the heating layer, 
 wherein the first additional heating layer is separated from the second additional heating layer. 
 
     
     
       2. The planar heating device of  claim 1 , wherein
 the first additional heating layer contacts the first electrode, and 
 the second additional heating layer contacts the second electrode. 
 
     
     
       3. The planar heating device of  claim 1 , wherein
 a resistance of each of a region of the heating layer, on which the first additional heating layer is disposed, and a region of the heating layer, on which the second additional heating layer is disposed, is lower than a resistance of a region of the heating layer, on which the first and second additional heating layers are not disposed. 
 
     
     
       4. The planar heating device of  claim 1 , wherein
 each of the heating layer, the first additional heating layer and the second additional heating layer comprises carbon nanotubes. 
 
     
     
       5. The planar heating device of  claim 1 , wherein
 each of the heating layer, the first additional heating layer and the second additional heating layer comprises a conductive oxide film, 
 wherein the conductive oxide film comprises at least one of RuO 2 , MnO 2 , VO 2 , TaO 2 , IrO 2 , NbO 2 , WO 2 , GaO 2 , MoO 2 , InO 2 , CrO 2 , and RhO 2 . 
 
     
     
       6. The planar heating device of  claim 1 , wherein
 a thickness of the heating layer is in a range of about 10 micrometers to about 100 micrometers, and 
 a thickness of each of the first and second additional heating layers is in a range of about 10 micrometers to about 100 micrometers. 
 
     
     
       7. The planar heating device of  claim 6 , wherein
 the thickness of each of the first and second additional heating layers is equal to or greater than the thickness of the heating layer. 
 
     
     
       8. The planar heating device of  claim 7 , wherein
 the thickness of each of the first and second additional heating layers is equal to or twice the thickness of the heating layer. 
 
     
     
       9. The planar heating device of  claim 1 , wherein
 a width of each of the first and second additional heating layers is in a range of about 10 millimeters to about 20 millimeters. 
 
     
     
       10. The planar heating device of  claim 1 , wherein
 each of the first and second electrodes comprises at least one of silver, aluminum, indium tin oxide, copper, molybdenum, and platinum. 
 
     
     
       11. A method of manufacturing a planar heating device, the method comprising:
 preparing a substrate; 
 providing first and second electrodes on opposing end portions of the substrate, respectively; 
 providing a heating layer on the substrate in a way such that the heating layer contacts the first and second electrodes; 
 providing a first additional heating layer on an end portion of the heating layer; and 
 providing a second additional heating layer on an opposing end portion of the heating layer, 
 wherein the first additional heating layer is separated from the second additional heating layer. 
 
     
     
       12. The method of  claim 11 , wherein
 the first additional heating layer contacts the first electrode, and 
 the second additional heating layer contacts the second electrode. 
 
     
     
       13. The method of  claim 11 , wherein
 resistance of each of a region of the heading layer, on which the first additional heating layer is provided, and a region of the heading layer, on which the second additional heating layer is provided, is lower than resistance of a region of the heading layer on which the first and second additional heating layers are not provided. 
 
     
     
       14. The method of  claim 11 , wherein
 a thickness of the heating layer is in a range of about 10 micrometers to about 100 micrometers, and 
 a thickness of each of the first and second additional heating layers is in a range of about 10 micrometers to about 100 μm micrometers. 
 
     
     
       15. The method of  claim 14 , wherein
 the thickness of each of the first and second additional heating layers is equal to or greater than the thickness of the heating layer. 
 
     
     
       16. The method of  claim 15 , wherein
 the thickness of each of the first and second additional heating layers is equal to or twice the thickness of the heating layer. 
 
     
     
       17. The method of  claim 11 , wherein
 a width of each of the first and second additional heating layers is in a range of about 10 millimeters to about 20 millimeters.