P
US10651222B2ActiveUtilityPatentIndex 73

Solid-state imaging device and electronic apparatus

Assignee: SONY CORPPriority: Mar 23, 2016Filed: Jan 18, 2017Granted: May 12, 2020
Est. expiryMar 23, 2036(~9.7 yrs left)· nominal 20-yr term from priority
Inventors:KATO NANAKOWAKANO TOSHIFUMIOTAKE YUSUKE
H01L 27/14687H01L 27/14638H01L 27/14621H01L 31/107H01L 27/307H01L 27/14625H01L 27/14667H01L 27/1464H01L 27/1461H01L 27/1463H01L 27/14645H01L 27/14627H04N 25/70Y02E10/541H10F 30/225H10F 39/026H10F 39/192H10F 39/8033H10F 39/18H10F 39/8063H10F 39/8053H10F 39/812H10F 39/199H10F 39/806H10F 39/182H10F 39/807H10K 19/00H04N 25/76H10K 39/32H04N 23/12
73
PatentIndex Score
4
Cited by
27
References
20
Claims

Abstract

A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. A solid-state imaging device, comprising:
 a photoelectric conversion film above a semiconductor substrate, wherein the photoelectric conversion film is configured to:
 perform photoelectric conversion on light having a first wavelength range; and 
 transmit light having a second wavelength range different from the first wavelength range; 
 
 a color filter between the photoelectric conversion film and the semiconductor substrate; and 
 a photoelectric conversion region inside the semiconductor substrate, wherein
 the photoelectric conversion region is configured to perform photoelectric conversion on the light having the second wavelength range, 
 the light having the second wavelength range passes through the photoelectric conversion film, and 
 the photoelectric conversion film has an avalanche function. 
 
 
     
     
       2. The solid-state imaging device according to  claim 1 , wherein the photoelectric conversion film is an organic film that includes an organic material. 
     
     
       3. The solid-state imaging device according to  claim 1 , wherein the photoelectric conversion film is an inorganic film that includes an inorganic material. 
     
     
       4. The solid-state imaging device according to  claim 1 , wherein the photoelectric conversion film has a function of accumulating charge obtained by the photoelectric conversion on the light having the first wavelength range. 
     
     
       5. The solid-state imaging device according to  claim 1 , wherein
 the photoelectric conversion film includes laminated photoelectric conversion films corresponding to two colors, and 
 each of the photoelectric conversion films corresponding to the two colors includes a film having the avalanche function. 
 
     
     
       6. The solid-state imaging device according to  claim 5 , wherein each of the photoelectric conversion films corresponding to the two colors is an organic film that includes an organic material. 
     
     
       7. The solid-state imaging device according to  claim 5 , wherein each of the photoelectric conversion films corresponding to the two colors is an inorganic film that includes an inorganic material. 
     
     
       8. The solid-state imaging device according to  claim 5 , wherein
 a first photoelectric conversion film of the photoelectric conversion films is on an incident light side of the solid-state imaging device, 
 the first photoelectric conversion film is configured to perform photoelectric conversion on blue light, 
 a second photoelectric conversion film of the photoelectric conversion films is on a semiconductor substrate side of the solid-state imaging device, 
 the second photoelectric conversion film is configured to perform photoelectric conversion on green light, and 
 the photoelectric conversion region inside the semiconductor substrate is further configured to perform photoelectric conversion on red light. 
 
     
     
       9. The solid-state imaging device according to  claim 1 , wherein the photoelectric conversion region inside the semiconductor substrate corresponds to at least one color. 
     
     
       10. The solid-state imaging device according to  claim 9 , further comprising a complementary color filter on an incident light side of the photoelectric conversion film. 
     
     
       11. An electronic apparatus, comprising:
 a solid-state imaging device that includes:
 a photoelectric conversion film above a semiconductor substrate, wherein the photoelectric conversion film is configured to:
 perform photoelectric conversion on light having a first wavelength range; and 
 transmit light having a second wavelength range different from the first wavelength range; 
 
 a color filter between the photoelectric conversion film and the semiconductor substrate; and 
 a photoelectric conversion region inside the semiconductor substrate, wherein
 the photoelectric conversion region is configured to perform photoelectric conversion on the light having the second wavelength range, 
 the light having the second wavelength range passes through the photoelectric conversion film, and 
 the photoelectric conversion film has an avalanche function. 
 
 
 
     
     
       12. The electronic apparatus according to  claim 11 , wherein the photoelectric conversion film is an organic film that includes an organic material. 
     
     
       13. The electronic apparatus according to  claim 11 , wherein the photoelectric conversion film is an inorganic film that includes an inorganic material. 
     
     
       14. The electronic apparatus according to  claim 11 , wherein the photoelectric conversion film has a function of accumulating charge obtained by the photoelectric conversion on the light having the first wavelength range. 
     
     
       15. The electronic apparatus according to  claim 11 , wherein
 the photoelectric conversion film includes laminated photoelectric conversion films corresponding to two colors, and 
 each of the photoelectric conversion films corresponding to the two colors includes a film having the avalanche function. 
 
     
     
       16. The electronic apparatus according to  claim 15 , wherein each of the photoelectric conversion films corresponding to the two colors is an organic film that includes an organic material. 
     
     
       17. The electronic apparatus according to  claim 15 , wherein each of the photoelectric conversion films corresponding to the two colors is an inorganic film that includes an inorganic material. 
     
     
       18. The electronic apparatus according to  claim 15 , wherein
 a first photoelectric conversion film of the photoelectric conversion films is on an incident light side of the solid-state imaging device, 
 the first photoelectric conversion film is configured to perform photoelectric conversion on blue light, 
 a second photoelectric conversion film of the photoelectric conversion films is on a semiconductor substrate side of the solid-state imaging device, 
 the second photoelectric conversion film is configured to perform photoelectric conversion on green light, and 
 the photoelectric conversion region inside the semiconductor substrate is further configured to perform photoelectric conversion on red light. 
 
     
     
       19. The electronic apparatus according to  claim 11 , wherein the photoelectric conversion region inside the semiconductor substrate corresponds to at least one color. 
     
     
       20. The electronic apparatus according to  claim 19 , wherein the solid-state imaging device further includes a complementary color filter on an incident light side of the photoelectric conversion film.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.