Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

Abstract

A method for fabricating an optoelectronic semiconductor component is disclosed. A semiconductor chip is produced by singularizing a wafer. The semiconductor chip comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate. The semiconductor layer sequence has an active region for emission or absorption of radiation and a sacrificial region arranged next to the active region. The sacrificial region in the finished semiconductor component is not intended to emit or absorb radiation. A trench, introduced into the semiconductor layer sequence, penetrates the active layer and separates the active region from the sacrificial region. The semiconductor chip with the semiconductor layer sequence is applied on a carrier. The substrate is detached from the active region of the semiconductor layer sequence. In the sacrificial region, the semiconductor layer sequence remains mechanically connected to the substrate.

The invention claimed is: 
     
       1. A method for producing an optoelectronic semiconductor component comprises:
 singulating a semiconductor wafer to provide a semiconductor chip that comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate, wherein the semiconductor layer sequence has an active region for emission or absorption of radiation and a sacrificial region arranged next to the active region in a direction parallel to the main side, wherein the sacrificial region is not intended to emit or absorb radiation, and wherein a trench penetrates the active layer and separates the active region from the sacrificial region; 
 after singulating the semiconductor wafer, applying the semiconductor chip with the semiconductor layer sequence to a carrier; 
 detaching the substrate from the active region of the semiconductor layer sequence, wherein in the sacrificial region the semiconductor layer sequence remains mechanically connected to the substrate; and 
 subsequently removing the substrate from the semiconductor layer sequence by detaching the substrate in the sacrificial region. 
 
     
     
       2. The method according to  claim 1 , wherein singulating the semiconductor wafer comprises providing a plurality of semiconductor chips and wherein applying the semiconductor chip to the carrier comprises simultaneously applying the plurality of semiconductor chips to the carrier, each semiconductor chip having its own, one-to-one associated substrate. 
     
     
       3. The method according to  claim 1 , wherein the substrate remains intact during the detaching and subsequent removing steps and wherein the substrate is self- supporting and mechanically stable after removing. 
     
     
       4. The method according to  claim 1 , wherein the substrate is a growth substrate of the semiconductor layer sequence. 
     
     
       5. The method according to  claim 1 , wherein, the trench completely penetrates the semiconductor layer sequence in a vertical direction, perpendicular to the lateral direction, and extends as far as the substrate. 
     
     
       6. The method according to  claim 1 , wherein the substrate is detached from the semiconductor layer sequence by a laser separation method. 
     
     
       7. The method according to  claim 1 , wherein the sacrificial region forms, in plan view of the semiconductor layer sequence, a contiguous path that runs completely around the active region of the semiconductor layer sequence. 
     
     
       8. The method according  claim 1 , wherein:
 the semiconductor layer sequence has a plurality of sacrificial regions; 
 the sacrificial regions are separated from each other by trenches; and 
 the sacrificial regions, in a plan view of the semiconductor layer sequence, are arranged around the active region. 
 
     
     
       9. The method according to  claim 1 , further comprising, after removing the substrate from the semiconductor layer sequence, removing the semiconductor layer sequence in the sacrificial region. 
     
     
       10. The method according to  claim 1 , wherein the semiconductor chip is mechanically permanently attached and electrically contacted on the carrier while the semiconductor chip is applied to the carrier. 
     
     
       11. The method according to  claim 1 , further comprising detaching the carrier from the semiconductor chip. 
     
     
       12. The method according to  claim 1 , further comprising introducing an encapsulation layer into the trench, the encapsulation layer protecting the semiconductor layer sequence from external influences. 
     
     
       13. The method according to  claim 1 , wherein:
 the substrate is a sapphire growth substrate; 
 the semiconductor layer sequence comprises AlInGaN and is grown on the substrate; and 
 the carrier is a microelectronic-containing Si-wafer. 
 
     
     
       14. An optoelectronic semiconductor component comprising:
 a carrier; 
 a semiconductor layer sequence arranged on the carrier, the semiconductor layer sequence having an active layer extending parallel to a main side of the carrier and a sacrificial region arranged next to the active layer in a lateral direction, parallel to the main side of the carrier, the active layer configured to emit or absorb radiation during normal operation; and 
 a trench in the semiconductor layer sequence that extends completely through the semiconductor layer sequence, the trench separating the active layer from the sacrificial region; 
 wherein the sacrificial region forms an edge region of the semiconductor layer sequence; 
 wherein the active layer or the semiconductor layer sequence is damaged in the sacrificial region; 
 wherein the sacrificial region is not intended to emit or absorb radiation; 
 wherein the semiconductor layer sequence is free of any growth substrate; 
 wherein no mechanically self-supporting substrate or other carrier is arranged downstream of the semiconductor layer sequence in a direction away from the carrier; and 
 wherein the optoelectronic semiconductor component is a single finalized optoelectronic semiconductor component. 
 
     
     
       15. The optoelectronic semiconductor component of  claim 14 , wherein the semiconductor layer sequence comprises AlInGaN. 
     
     
       16. The optoelectronic semiconductor component of  claim 14 , wherein the semiconductor layer sequences are identical in terms of the layer structure in the active region and in the sacrificial region; and
 wherein a lateral extent of the sacrificial region in one or more directions is smaller than the lateral extent of the active region in this direction or directions. 
 
     
     
       17. An optoelectronic semiconductor component comprising:
 a carrier; 
 a semiconductor layer sequence arranged on the carrier, the semiconductor layer sequence including an active layer extending parallel to a main side of the carrier; and 
 a trench in the semiconductor layer sequence which extends completely through the semiconductor layer sequence; 
 wherein the trench separates an active region of the semiconductor layer sequence from a plurality of sacrificial regions of the semiconductor layer sequence arranged next to the active region in a lateral direction, parallel to the main side of the carrier; 
 wherein the trench borders the active region and at least one sacrificial region; 
 wherein the semiconductor layer sequences are identical in terms of the layer structure in the active region and in the sacrificial region; 
 wherein a lateral extent of the sacrificial region in one or more directions is smaller than the lateral extent of the active region in this direction or directions; 
 wherein the sacrificial regions are arranged one behind the other; 
 wherein a sacrificial region forms an edge region of the semiconductor layer sequence; 
 wherein the optoelectronic semiconductor component is configured so that radiation is emitted or absorbed by the active layer in the active region during normal operation; 
 wherein in the sacrificial regions, the active layer or the semiconductor layer sequence are damaged; 
 wherein the sacrificial regions are not intended to emit or absorb radiation; 
 wherein the semiconductor layer sequence is free of any growth substrate; 
 wherein no mechanically self-supporting substrate or other carrier is arranged downstream of the semiconductor layer sequence in a direction away from the carrier; and 
 wherein the optoelectronic semiconductor component is a single finalized optoelectronic semiconductor component. 
 
     
     
       18. The optoelectronic semiconductor component of  claim 17 , wherein the semiconductor layer sequence comprises AlInGaN.