Hyperuniform and nearly hyperuniform random network materials

Abstract

This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.

We claim: 
     
       1. A composition comprising an amorphous tetrahedrally-coordinated solid, wherein the observed value S(k→0) is less than 0.035. 
     
     
       2. The composition of  claim 1 , wherein the observed value S(k→0) is less than 0.028. 
     
     
       3. The composition of  claim 1 , wherein the observed value S(k→0) is less than 0.016. 
     
     
       4. The composition of  claim 1 , wherein the observed value S(k→0) is approximately 0.0075. 
     
     
       5. The composition of  claim 1 , wherein said amorphous tetrahedrally-coordinated solid comprises one or more of amorphous germanium and amorphous silicon dioxide. 
     
     
       6. A method comprising:
 a) thermal annealing amorphous tetrahedrally-coordinated solid for at least one hour under conditions that produce annealed amorphous tetrahedrally-coordinated solid having an observed value S(k→0) less than 0.035, and 
 b) measuring the degree of hyperuniformity of said annealed amorphous tetrahedrally-coordinated solid. 
 
     
     
       7. The method of  claim 6 , wherein said amorphous tetrahedrally-coordinated solid comprises one or more of amorphous germanium and amorphous silicon dioxide. 
     
     
       8. The method of  claim 6 , wherein hyperuniformity is measured by determining the observed value S(k→0). 
     
     
       9. The method of  claim 6 , wherein the observed value S(k→0) is less than 0.028. 
     
     
       10. The method of  claim 6 , wherein the observed value S(k→0) is less than 0.016. 
     
     
       11. The method of  claim 6 , wherein the observed value S(k→0) is approximately 0.0075. 
     
     
       12. The method of  claim 6 , wherein said thermal annealing is under pressure. 
     
     
       13. The method of  claim 12 , wherein said pressure compresses said amorphous tetrahedrally-coordinated solid by from 6% to 10%. 
     
     
       14. The method of  claim 12 , wherein said pressure is from 10 to 30 gigapascals (GPa). 
     
     
       15. The method of  claim 6 , wherein said thermal annealing is between 400° and 800° Centigrade. 
     
     
       16. The method of  claim 6 , further comprising quenching said annealed amorphous tetrahedrally-coordinated solid. 
     
     
       17. The method of  claim 16 , wherein said quenching is at zero pressure. 
     
     
       18. The method of  claim 16 , wherein said quenching is under pressure. 
     
     
       19. The method of  claim 18 , wherein said pressure compresses said annealed tetrahedrally-coordinated solid by from 6% to 10%. 
     
     
       20. The method of  claim 18 , wherein said pressure is from 10 to 30 gigapascals (GPa). 
     
     
       21. A composition comprising one or more annealed amorphous tetrahedrally-coordinated solid produced by method of  claim 6 , and having an observed value S(k→0) less than 0.028. 
     
     
       22. The composition of  claim 21 , wherein said annealed amorphous tetrahedrally-coordinated solid comprises one or more of annealed amorphous germanium and annealed amorphous silicon dioxide. 
     
     
       23. A method comprising:
 a) thermal annealing amorphous tetrahedrally-coordinated solid for at least one hour under pressure to produce annealed amorphous tetrahedrally-coordinated solid, and 
 b) quenching said annealed amorphous tetrahedrally-coordinated solid under pressure to produce quenched annealed amorphous tetrahedrally-coordinated solid having an observed value S(k→0) less than 0.028. 
 
     
     
       24. The method of  claim 23 , wherein said amorphous tetrahedrally-coordinated solid comprises one or more of amorphous germanium and amorphous silicon dioxide. 
     
     
       25. The method of  claim 23 , further comprising measuring the degree of hyperuniformity of at least one of said annealed amorphous tetrahedrally-coordinated solid, and quenched annealed amorphous tetrahedrally-coordinated solid. 
     
     
       26. A composition comprising quenched annealed amorphous tetrahedrally-coordinated solid produced by the method of  claim 23 , and having an observed value S(k→0) less than 0.028. 
     
     
       27. The composition of  claim 26 , wherein said quenched annealed amorphous tetrahedrally-coordinated solid comprises one or more of quenched annealed amorphous germanium and quenched annealed amorphous silicon dioxide.