Process for the generation of thin inorganic films

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R 1 , R 2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R 3 , R 4 , and R 5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

The invention claimed is: 
     
       1. A process, comprising:
 bringing a compound of formula (I): 
 
       
         
           
           
               
               
           
         
         into a gaseous or aerosol state, and 
         depositing the compound from the gaseous or aerosol state onto a solid substrate, thereby forming a deposited compound, 
         wherein 
         M is Mn, Ni or Co, 
         X is a ligand which coordinates M, 
         n is 0, 1, or 2, 
         R 1 , R 2  are an alkyl group, an alkenyl group, an aryl group or a silyl group, 
         m is 1, 2, or 3, 
         R 3 , R 4 , and R 5  are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and 
         p is 1, 2 or 3. 
       
     
     
       2. The process according to  claim 1 ,
 wherein only two of R 3 , R 4  and R 5  are the same or all R 3 , R 4  and R 5  are different to each other. 
 
     
     
       3. The process according to  claim 1 ,
 wherein n is 0, 
 m is 2 and 
 p is 1. 
 
     
     
       4. The process according to  claim 1 ,
 wherein R 1  and R 2  are a silyl group. 
 
     
     
       5. The process according to  claim 1 ,
 wherein R 3 , R 4  and R 5  are methyl, ethyl, iso-propyl or tert-butyl. 
 
     
     
       6. The process according to  claim 1 ,
 wherein M is Co. 
 
     
     
       7. The process according to  claim 1 , further comprising:
 chemisorbing the compound on a surface of the solid substrate. 
 
     
     
       8. The process according to  claim 1 , further comprising:
 decomposing the deposited compound by removing all ligands. 
 
     
     
       9. The process according to  claim 8 , further comprising:
 exposing the deposited compound to a reducing agent. 
 
     
     
       10. The process according to  claim 8 ,
 wherein a sequence of the depositing the compound onto the solid substrate and the decomposing the deposited compound is performed at least twice. 
 
     
     
       11. A process for forming a film on a solid substrate, comprising:
 applying, to the solid substrate, a compound of formula (I), 
 
       
         
           
           
               
               
           
         
         wherein M is Mn, Ni or Co, 
         X is a ligand which coordinates M, 
         n is 0, 1, or 2, 
         R 1 , R 2  are an alkyl group, an alkenyl group, an aryl group or a silyl group, 
         m is 1, 2, or 3, 
         R 3 , R 4 , and R 5  are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and 
         p is 1, 2 or 3.