Image sensing device

Abstract

An image sensing device for minimizing light reflected from a light shielding layer is disclosed. The image sensing device includes a semiconductor layer formed to include an active pixel region and an optical black pixel region, a light shielding layer located at the optical black pixel region formed over the semiconductor layer, a first color filter layer located at the active pixel region formed over the semiconductor layer, and a second color filter layer located over the light shielding layer. Each of the first and second color filter layers includes at least one first color filter, at least one second color filter, and at least one third color filter. In the first color filter layer, the first color filter, the second color filter, and the third color filter are arranged in the same layer. In the second color filter layer, the first color filter and the second color filter are arranged in the same layer whereas the third color filter is formed in another layer different from the layer of the first and second color filters.

What is claimed is: 
     
       1. An image sensing device comprising:
 a semiconductor layer formed to include an active pixel region including photosensing pixels responsive to light to produce electrical charges or signals, an optical black pixel region separated from the active pixel region and including additional photosensing pixels responsive to light to produce electrical charges or signals, and a dummy pixel region disposed between the active pixel region and the optical black pixel region; 
 a light shielding layer formed over the semiconductor layer and located in the optical black pixel region to shield the additional photosensing pixels from radiation in response to receiving light incident upon the image sensing device; 
 a first color filter layer formed over the semiconductor layer and located in the active pixel region; 
 a second color filter layer located over the light shielding layer of the optical black pixel region; and 
 a third color filter layer formed over the semiconductor layer and located in the dummy pixel region, 
 wherein each of the first to third color filter layers includes at least one first color filter, at least one second color filter, and at least one third color filter, 
 wherein, in the second color filter layer and a part of the third color filter layer, the first color filter and the second color filter are arranged in a same layer and the third color filter is arranged in another layer different from the layer of the first and second color filters. 
 
     
     
       2. The image sensing device according to  claim 1 , wherein the first color filter, the second color filter, and the third color filter that are formed in the first to third color filter layers are a red color filter, a green color filter, and a blue color filter, respectively. 
     
     
       3. The image sensing device according to  claim 2 , wherein the first to third color filters are arranged in a Bayer pattern in the first color filter layer. 
     
     
       4. The image sensing device according to  claim 3 , wherein the second color filter layer includes:
 a lower filter layer in which the first color filter and the second color filter are alternately arranged in a first direction and a second direction perpendicular to the first direction; and 
 an upper filter layer in which the third color filter covers the lower filter layer. 
 
     
     
       5. The image sensing device according to  claim 1 , wherein each of the first to third color filters that are formed in the first to third color filter layers has a same thickness. 
     
     
       6. An image sensing device comprising:
 a semiconductor layer formed to include an active pixel region, a dummy pixel region, and an optical black pixel region, each of the active pixel region, the dummy pixel region, and the optical black pixel region including photosensing pixels; 
 a light shielding layer located in the optical black pixel region, the light shielding layer formed over the semiconductor layer and configured to shield the photosensing pixels in the optical black pixel region from radiation in response to receiving light incident upon the image sensing device; and 
 a color filter layer formed over the semiconductor layer and in the active region, the dummy pixel region, and the optical black pixel region, 
 wherein the color filter layer includes at least one first color filter, at least one second color filter, and at least one third color filter, the first, second, and third color filters configured to filter different colored lights from one another, 
 the color filter layer formed in the active pixel region includes the first color filter, the second color filter, and the third color filter that are arranged in a single layer, and 
 the color filter layer formed in a part of the dummy pixel region and the color filter layer formed in the optical black pixel region include the first color filter and the second color filter that are arranged in a same layer and the third color filter formed in another layer different from the same layer. 
 
     
     
       7. The image sensing device according to  claim 6 , wherein the first color filter, the second color filter, and the third color filter are a red color filter, a green color filter, and a blue color filter, respectively. 
     
     
       8. The image sensing device according to  claim 7 , wherein the first to third color filters included in the color filter layer formed in the active pixel region are arranged in a Bayer pattern. 
     
     
       9. The image sensing device according to  claim 8 , wherein the color filter layer formed over the light shielding layer includes:
 a first lower filter layer in which the first color filter and the second color filter are alternately arranged in a first direction and a second direction perpendicular to the first direction; and 
 a first upper filter layer in which the third color filter covers the first lower filter layer. 
 
     
     
       10. The image sensing device according to  claim 9 , wherein the dummy pixel region includes:
 a first dummy pixel region located adjacent to the active pixel region; 
 a second dummy pixel region located adjacent to the first dummy pixel region; and 
 a third dummy pixel region located between the second dummy pixel region and the optical black pixel region. 
 
     
     
       11. The image sensing device according to  claim 10 , wherein the first dummy pixel region includes:
 a color filter layer including the first to third color filters that are arranged in a same manner as in the color filter layer of the active pixel region. 
 
     
     
       12. The image sensing device according to  claim 10 , wherein the second dummy pixel region includes:
 a second lower filter layer in which the first to third color filters are arranged in a Bayer pattern; and 
 a second upper filter layer in which the third color filter covers the second lower filter layer. 
 
     
     
       13. The image sensing device according to  claim 12 , wherein the first upper filter layer and the second upper filter layer have different thicknesses from each other. 
     
     
       14. The image sensing device according to  claim 10 , wherein the third dummy pixel region includes:
 a color filter layer including the first to third color filters that are arranged in a same manner as in the color filter layer of the optical black pixel region. 
 
     
     
       15. An image sensing device comprising:
 a semiconductor layer formed to include an active pixel region, an optical black pixel region and a dummy pixel region between the active pixel region and the optical black pixel region; and 
 a color filter layer formed over the semiconductor layer, 
 wherein the color filter layer includes at least one first color filter, at least one second color filter, and at least one third color filter, the first, second, and third color filters configured to filter different colored lights from one another, 
 the color filter layer formed in the dummy pixel region and the optical black pixel region includes a lower filter layer and an upper filter layer formed over the lower filter layer, 
 in the dummy pixel region, the lower filter layer includes the first to third color filters and the upper filter layer includes the third color filter, 
 in the optical black pixel region, the lower filter layer includes the first color filter and the second color filter and the upper filter layer includes the third color filter. 
 
     
     
       16. The image sensing device of  claim 15 , wherein the first color filter, the second color filter, and the third color filter are a red color filter, a green color filter, and a blue color filter, respectively.