Light-emitting device

Abstract

It is an object of the present invention to provide a light-emitting device where periphery deterioration can be prevented from occurring even when an organic insulating film is used as an insulating film for the light-emitting device. In addition, it is an object of the present invention to provide a light-emitting device where reliability for a long period of time can be improved. A structure of an inorganic film, an organic film, and an inorganic film is not continuously provided from under a sealing material under a cathode for a light-emitting element. In addition, penetration of water is suppressed by defining the shape of the inorganic film that is formed over the organic film even when a structure of an inorganic film, an organic film, and an inorganic film is continuously provided under a cathode for a light-emitting element.

What is claimed is: 
     
       1. A light-emitting device comprising:
 a first substrate; 
 a transistor over the first substrate; 
 a first organic insulating layer over the transistor; 
 a conductive layer over the first organic insulating layer; 
 a first electrode over the first organic insulating layer; 
 a second organic insulating layer over the conductive layer and the first electrode; 
 a layer containing a light-emitting material over the second organic insulating layer; and 
 a second electrode over the layer containing the light-emitting material, 
 wherein the conductive layer comprises a first opening and a second opening, 
 wherein the second organic insulating layer overlaps each of the first opening and the second opening, 
 wherein the second electrode overlaps the conductive layer with the second organic insulating layer interposed therebetween, and 
 wherein the layer containing the light-emitting material overlaps the conductive layer with the second organic insulating layer interposed therebetween. 
 
     
     
       2. The light-emitting device according to  claim 1 , further comprising:
 a sealing material over and in contact with the conductive layer; and 
 a second substrate over and in contact with the sealing material, 
 wherein the conductive layer is a same layer as a source electrode and a drain electrode of the transistor, and 
 wherein the first opening and the second opening are provided in a region of the conductive layer which is positioned between a pixel portion comprising the transistor and an external connecting portion. 
 
     
     
       3. The light-emitting device according to  claim 1 , wherein the first opening and the second opening each have a rectangular shape. 
     
     
       4. The light-emitting device according to  claim 1 , wherein the conductive layer comprises copper. 
     
     
       5. The light-emitting device according to  claim 1 , wherein the conductive layer has a stacked structure containing aluminum. 
     
     
       6. The light-emitting device according to  claim 1 , wherein the transistor is a top-gate thin film transistor using a crystalline silicon film. 
     
     
       7. The light-emitting device according to  claim 1 ,
 wherein the first substrate is a plastic substrate. 
 
     
     
       8. An electronic device comprising the light-emitting device according to  claim 1 . 
     
     
       9. The light-emitting device according to  claim 2 , wherein the external connecting portion is electrically connected to a flexible printed circuit. 
     
     
       10. A light-emitting device comprising:
 a first substrate; 
 a transistor over the first substrate; 
 a first organic insulating layer over the transistor; 
 a conductive layer over the first organic insulating layer; 
 a first electrode over the first organic insulating layer; 
 a second organic insulating layer over the conductive layer and the first electrode; 
 a layer containing a light-emitting material over the second organic insulating layer; and 
 a second electrode over the layer containing the light-emitting material, 
 wherein the conductive layer comprises a first opening and a second opening, 
 wherein the second organic insulating layer overlaps each of the first opening and the second opening, 
 wherein the second electrode overlaps the conductive layer with the second organic insulating layer interposed therebetween, 
 wherein the layer containing the light-emitting material overlaps the conductive layer with the second organic insulating layer interposed therebetween, and 
 wherein the layer containing the light-emitting material overlaps a gap between the first electrode and the conductive layer. 
 
     
     
       11. The light-emitting device according to  claim 10 , further comprising:
 a sealing material over and in contact with the conductive layer; and 
 a second substrate over and in contact with the sealing material, 
 wherein the conductive layer is a same layer as a source electrode and a drain electrode of the transistor, and 
 wherein the first opening and the second opening are provided in a region of the conductive layer which is positioned between a pixel portion and an external connecting portion. 
 
     
     
       12. The light-emitting device according to  claim 10 , wherein the first opening and the second opening each have a rectangular shape. 
     
     
       13. The light-emitting device according to  claim 10 , wherein the conductive layer comprises copper. 
     
     
       14. The light-emitting device according to  claim 10 , wherein the conductive layer has a stacked structure containing aluminum. 
     
     
       15. The light-emitting device according to  claim 10 , wherein the transistor is a top-gate thin film transistor using a crystalline silicon film. 
     
     
       16. The light-emitting device according to  claim 10 , wherein the light-emitting material is a triplet-excitation luminescent material. 
     
     
       17. The light-emitting device according to  claim 10 ,
 wherein the second electrode overlaps with a gap between the conductive layer and the first electrode. 
 
     
     
       18. The light-emitting device according to  claim 10 ,
 wherein the first substrate is a plastic substrate. 
 
     
     
       19. An electronic device comprising the light-emitting device according to  claim 10 . 
     
     
       20. The light-emitting device according to  claim 11 , wherein the external connecting portion is electrically connected to a flexible printed circuit. 
     
     
       21. An electronic device comprising the light-emitting device according to  claim 7 . 
     
     
       22. The light-emitting device according to  claim 17 ,
 wherein the first substrate is a plastic substrate. 
 
     
     
       23. A light-emitting device comprising:
 a substrate; 
 a first organic insulating layer over the substrate; 
 a conductive layer over the first organic insulating layer; 
 a first electrode over the first organic insulating layer; 
 a second organic insulating layer over the conductive layer and the first electrode; 
 a layer containing a light-emitting material over the second organic insulating layer; and 
 a second electrode over the layer containing the light-emitting material, 
 wherein the conductive layer comprises a first opening and a second opening, 
 wherein the second organic insulating layer overlaps each of the first opening and the second opening, 
 wherein the second electrode overlaps the conductive layer with the second organic insulating layer interposed therebetween, and 
 wherein an end portion of the second organic insulating layer overlaps the conductive layer.